IS43R86400E-5BL Allicdata Electronics
Allicdata Part #:

IS43R86400E-5BL-ND

Manufacturer Part#:

IS43R86400E-5BL

Price: $ 5.80
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 512M PARALLEL 200MHZ
More Detail: SDRAM - DDR Memory IC 512Mb (64M x 8) Parallel 200...
DataSheet: IS43R86400E-5BL datasheetIS43R86400E-5BL Datasheet/PDF
Quantity: 1000
190 +: $ 5.26835
Stock 1000Can Ship Immediately
$ 5.8
Specifications
Series: --
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (64M x 8)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Memory Interface: Parallel
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Description

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Memory

IS43R86400E-5BL is a type of memory used by electronic devices and systems. It is a DDR2 SDRAM, featuring 8 Banks of 64Mx4 organization, and provides a data rate of up to 400 MHz. The memory includes an integrated 4kB SRAM and serial presence detect, and is composed of an array of microscopic pathways that store information in cells. These pathways are divided into pages and columns, and each column is composed of memory blocks, which have their own command paths.

The IS43R86400E-5BL is mainly used in high-performance computers and servers. It is also suitable for industrial controllers, embedded systems with mission-critical applications, and other devices that require high speed and reliability. The memory offers a high degree of flexibility, allowing for easy configuration and customizability. It also uses an efficient configurable pipeline memory interface, which eliminates the need for complex routing when interfacing with the host controller. This ensures a smooth, reliable data transfer.

In terms of working principle, the IS43R86400E-5BL stores data in the microscopic pathways. These pathways contain small electrical pathways that form a continuous line from one end of the memory to the other. When a cell is written to, an electrical charge is passed through the pathway, thereby changing the state of the cell. Reading the data involves measuring the resistance in the pathway and interpreting the data accordingly. This type of memory is often referred to as Static RAM because it is capable of storing data even when the power is off.

The IS43R86400E-5BL also implements error checking and correction (ECC) technology to ensure data accuracy. This prevents memory corruption caused by flawed values, as well as faulty code, and also provides a more robust system. Since the ECC technology is integrated into the memory design, it ensures seamless performance withHost Controller Interface.

In conclusion, the IS43R86400E-5BL is a type of dynamic random access memory (DRAM) designed for high performance computers and servers. It offers a data rate of up to 400 MHz, and is composed of microscopic pathways that store information in cells. The memory also features ECC technology for data accuracy, and an efficient configurable pipeline memory interface for smoother data transfer. This makes the IS43R86400E-5BL ideal for mission-critical applications and other demanding tasks.

The specific data is subject to PDF, and the above content is for reference

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