IS45S16320F-6CTLA1

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM
Memory Size:	512Mb (32M x 16)
Clock Frequency:	167MHz
Write Cycle Time - Word, Page:	--
Access Time:	5.4ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	54-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	54-TSOP II

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IS45S16320F-6CTLA1 Memory

The IS45S16320F-6CTLA1 is a type of synchronous DRAM (Dynamic Random Access Memory) that mainly finds its application in consumer electronics and embedded systems. The IS45S16320F-6CTLA1 memory offers a wide range of features, including high-speed operation, low power consumption, high data storage capacity and extensive support for consumer electronics applications.The IS45S16320F-6CTLA1 DRAM is designed to provide a high capacity, low power alternative to traditional DRAMs. It has an industry-standard 64MB capacity, making it well suited for consumer electronics applications. The device also offers high-speed operation, with a maximum clock frequency of 150MHz, making it suitable for a wide range of applications, including gaming consoles, audio-visual equipment, mobile phones, and computer motherboards. The low power consumption of the IS45S16320F-6CTLA1 memory allows the device to operate within a limited power budget, reducing system size, cost, and energy consumption. The IS45S16320F-6CTLA1 also provides for low latency operation, further increasing system efficiency. The asynchronous interface of the IS45S16320F-6CTLA1 memory allows for information to be transferred from the memory in smaller, more frequent blocks than is possible with traditional DRAMs. This reduces power consumption while maintaining a high level of performance. As an added benefit, the asynchronous interface ensures compatibility with a wide range of systems and devices.The IS45S16320F-6CTLA1 offers an innovative approach to performance and power consumption by providing support for a wide variety of devices and systems. The device provides on-chip error correction capabilities that improve system reliability. It also provides a mechanism for addressing memory errors, allowing for faster error recovery and improved system availability. The device\'s on-chip controller also enables advanced features such as temperature monitoring and self-timed algorithms that optimize the DRAMs performance.At the heart of the IS45S16320F-6CTLA1 memory is its unique architecture and design. The device is built on a foundation of SDRAM (Synchronous DRAM) and silicon-on-insulator technology, which allows for improved performance and greater power efficiency. The device\'s bus-oriented architecture provides the necessary control capability to distributed multi-port memory access, which allows the memory to be split into multiple independent segments. This configuration enables simultaneous access to different sections of the memory, thus enhancing system performance and ensuring efficient data transfer.The IS45S16320F-6CTLA1 memory is a powerful, reliable and cost-effective memory solution for consumer electronics and embedded systems. It offers a high level of performance, low power consumption, and advanced features to meet the needs of today\'s demanding electronics applications. Its combination of industry-standard 64MB capacity, high-speed operation, low power consumption, and advanced features ensures that the IS45S16320F-6CTLA1 is an ideal solution for a wide range of applications.

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