IS46R16160F-6TLA1

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IS46R16160F-6TLA1 is a type of memory, suitable for mission-critical Applications. It is an integrated DDR3 memory and offers a reliable and high-performance solution to meet the latest industry standards. Equipped with 16-bit, 4-channel and on-chip error correction, the IS46R16160F-6TLA1 ensures data integrity and stability throughout operation and offers faster transfer performance compared to traditional single-chip solutions.

IS46R16160F-6TLA1 is a double data rate three, synchronous DRAM (DDR3L SDRAM) with a 4-bank, 1×16 bit organization. The device architecture is based on a storage capacity of 4098Mbit. The device also supports self-refresh and is available in 16-bit wide, 2 and 16Gbit densities.

The IS46R16160F-6TLA1 can be identified as an industrial grade memory, offering an improved operation temperature range of -40°C to +95°C, making it an ideal fit for products with a potentially more extreme environmental profile.

The IS46R16160F-6TLA1 features an independent 4-bank device operating at up to 1600 MHz, with each channel having a single bit width of 16-bits, running at there clock rate. This means that a total transfer rate of 3.2G/s is available. It offers a range of features than traditional single-chip DDR3 SDRAM solutions, including:

• On-chip error detection and correction (ECC)
• Data refresh
• Multi-bank device operation
• Variable Latency
• DDR3L POD/SOD protection
• Power-on-reset

The primary benefit of the IS46R16160F-6TLA1 is its ability to provide customers with a high degree of reliability, system stability and increased memory performance, while maintaining a small form factor. The device is ideal for memory-intensive applications with low latency, high bandwidth and data reliability requirements, such as industrial and medical applications.

The IS46R16160F-6TLA1 is also widely applicable in aircraft, automotive and IoT (Internet of Things) applications. It has also been developed with adaptive latency and increased memory bandwidth, making it an optimal choice for industrial applications. Equipped with an on-chip error detection and correction system, the IS46R16160F-6TLA1 offers reliable, on-the-fly data integrity.

When it comes to working principle, the operations logic of the IS46R16160F-6TLA1 is similar to that of most DDR3 memory. The device supports all traditional DDR3 operations (read, write, activate, precharge, refresh, etc.), just like in any DDR3 memory module. The operations are initiated by driving the appropriate address and control lines with specific combinations.

The IS46R16160F-6TLA1 is operated via the on-chip power-on reset (POR) system, which keeps the memory in a safe-read mode. When the memory is activated, the POR system automatically runs an internal reset and configures the operation logic of the device. The device also contains a built-in error detection and correction system, ensuring data integrity throughout operation.

In summary, the IS46R16160F-6TLA1 is a reliable and high-performance industrial grade DDR3 memory module, providing customers with improved latency, increased bandwidth and enhanced data integrity. It is highly applicable to a wide range of device applications, from aircraft to medical, and is capable of delivering optimal performance while maintaining a small form factor.

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