Allicdata Part #: | IXBX25N250-ND |
Manufacturer Part#: |
IXBX25N250 |
Price: | $ 24.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 2500V 55A 300W PLUS247 |
More Detail: | IGBT 2500V 55A 300W Through Hole PLUS247™-3 |
DataSheet: | IXBX25N250 Datasheet/PDF |
Quantity: | 129 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 22.09410 |
10 +: | $ 20.43720 |
25 +: | $ 18.78000 |
100 +: | $ 17.45440 |
Series: | BIMOSFET™ |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 2500V |
Current - Collector (Ic) (Max): | 55A |
Current - Collector Pulsed (Icm): | 180A |
Vce(on) (Max) @ Vge, Ic: | 3.3V @ 15V, 25A |
Power - Max: | 300W |
Switching Energy: | -- |
Input Type: | Standard |
Gate Charge: | 103nC |
Td (on/off) @ 25°C: | -- |
Test Condition: | -- |
Reverse Recovery Time (trr): | 1.6µs |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | PLUS247™-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IXBX25N250 is a high current, very low switching losses, and low saturation voltage of insulated gate bipolar transistor (IGBT). This IGBT can be used in a variety of applications, including motor controls, industrial, motor drives, and white goods applications. Its advanced design provides several benefits such as improved power density, high reliability and low switching losses. This article will discuss the application field and working principle of IXBX25N250.
Applications of IXBX25N250
IXBX25N250 is designed for high current, low switching losses and low saturation voltage applications. It is used in motor control, industrial motor drives, and white goods applications such as air conditioners, washing machines and refrigerators. This IGBT can also be used for various types of inductive, resistive and capacitive loads in a range of operating temperatures.
IXBX25N250 is also used in renewable energy applications such as solar energy, wind turbine or hydroelectric power. This IGBT is suitable for use as a switch for DC/DC converters and buck converters, which convert high-voltage DC power (typically from large sources such as solar panels) into lower-voltage DC power. It is also used in high-power AC/DC converters, which convert AC power (from the wall outlet) into low-voltage DC power.
IXBX25N250 can also be used in many other types of applications, such as LED lighting, motor control, automotive, industrial motor drives, and even high-speed communications. With its high current-handling capabilities, this IGBT can be used to switch high-power loads, with application temperatures up to 175 degrees Celsius.
Working Principle of IXBX25N250
The IXBX25N250 uses an insulated gate bipolar transistor (IGBT) as its active component. The IGBT consists of an N-channel field-effect transistor (FET) and a controllable diode. When a high DC current is applied to the gate of the FET, the voltage is increased and the current passes through the diode, thus turning the transistor on. When the voltage is reversed, the current stops and the transistor turns off.
The IGBT is widely used in many applications because of its low switching losses, high current capabilities, and low saturation voltage. It is also capable of handling high current surges, which can make it an ideal choice for certain applications. Furthermore, the IGBT is temperature resistant, making it suitable for use in a wide range of temperatures.
The IXBX25N250 IGBT is designed to provide high efficiency and low losses during switching operations. The IGBT is designed to provide high surge currents, minimal device degradation, and high reliability. Furthermore, the device provides accurate current control, which is important in many high power applications. The device is also capable of generating high-power pulses, which can be used in pulse-width modulation (PWM) applications.
Conclusion
IXBX25N250 is a high current, low switching losses and low saturation voltage insulated gate bipolar transistor (IGBT). This IGBT can be used in a variety of applications, including motor controls, industrial motor drives, white goods applications, and renewable energy applications. Its advanced design gives it several benefits such as improved power density, high reliability and low switching losses. In addition, the IXBX25N250 has a working principle based on an N-channel field-effect transistor (FET) and a controllable diode. This IGBT device is designed to provide high efficiency and low losses during switching operations, as well as accurate current control and high-power pulses.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IXBX75N170 | IXYS | 30.97 $ | 1000 | IGBT 1700V 200A 1040W PLU... |
IXBX75N170A | IXYS | 31.44 $ | 1000 | IGBT 1700V 110A 1040W PLU... |
IXBX64N250 | IXYS | 75.24 $ | 1000 | IGBT 2500VIGBT 2500V 156... |
IXBX25N250 | IXYS | 24.3 $ | 129 | IGBT 2500V 55A 300W PLUS2... |
IXBX50N360HV | IXYS | 40.12 $ | 273 | IGBT 3600V 125A 660W TO-2... |
IXBX55N300 | IXYS | 49.35 $ | 165 | IGBT 3000V 130A 625W PLUS... |
IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...
IGBT 1200V TO247-3IGBT
IGBT 1200V TO247-3IGBT 1200V 57A 200W T...
IGBT 600V TO-247 COPAKIGBT
INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...
POWER MOSFET TO-3IGBT