IXFH58N20

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IXFH58N20 application field and working principle:The IXFH58N20 is a single N-Channel MOSFET transistor, primarily used as a high-performance power switch for commercial and industrial applications. It is made from silicon based material and is able to handle voltages up to 200V, currents up to 8A and power levels up to 160W.The IXFH58N20 is capable of switching on and off currents faster than traditional FETs, thus allowing faster response times, less power usage and greater efficiency during operation. This makes it ideal for applications such as motor control, computer power supplies, and mobile device charging. The IXFH58N20 also has low on-resistance, low gate charge and low device capacitance, helping it to provide good thermal performance for heat critical applications and lower switching losses.The main function of the IXFH58N20 is to control the flow of electric current, and it does this by acting as an insulated gate. The gate of the transistor is a metal-oxide-semiconductor structure that acts as a switch, controlling the voltage at the drain and source. When the gate is switched on, an electric current will flow from the source, through the drain and back to the source. However, when the gate is turned off, current will not flow.The working principle of the IXFH58N20 can be divided into three parts: the gate input, the substrate biasing and the body biasing.The gate input of the IXFH58N20 is what draws the current through the transistor. A voltage applied to the gate input causes the drain to switch on and allow current to flow. This current then flows through the drain and the source, before then passing through the substrate.The substrate biasing works in two ways. First it provides a voltage between the source and drain to allow current to flow, and second it acts as an insulator to prevent any static buildup. Applying a voltage to the substrate biasing increases the flow of current from the source to the drain.The body biasing of the IXFH58N20 acts as a shield, preventing any static voltages from affecting the gate voltage. This helps ensure a high-performance current flow.The IXFH58N20 is a versatile transistor that has a wide range of uses in commercial and industrial applications, thanks to its fast switching times, low power consumption, and good thermal performance. It is certainly one of the most versatile single N-Channel MOSFETs available on the market, and is suitable for many applications.

The specific data is subject to PDF, and the above content is for reference