| Allicdata Part #: | IXFN62N80Q3-ND |
| Manufacturer Part#: |
IXFN62N80Q3 |
| Price: | $ 34.39 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 800V 49A SOT-227 |
| More Detail: | N-Channel 800V 49A (Tc) 960W (Tc) Chassis Mount SO... |
| DataSheet: |  IXFN62N80Q3 Datasheet/PDF |
| Quantity: | 58 |
| 1 +: | $ 34.39000 |
| 10 +: | $ 33.35830 |
| 100 +: | $ 32.67050 |
| 1000 +: | $ 31.98270 |
| 10000 +: | $ 30.95100 |
| Vgs(th) (Max) @ Id: | 6.5V @ 8mA |
| Package / Case: | SOT-227-4, miniBLOC |
| Supplier Device Package: | SOT-227B |
| Mounting Type: | Chassis Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 960W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 13600pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 270nC @ 10V |
| Series: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 140 mOhm @ 31A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 49A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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Introduction
The IXFN62N80Q3 is a power field-effect transistor (FET). It is manufactured by IXYS as part of its silicon insulated gate bipolar transistor (IGBT) family. It has been designed to interface electronic circuits with high-current loads. The IXFN62N80Q3 can be used in applications such as DC to AC power conversion, motor control, and high-efficiency switching applications.
Typical Applications
The IXFN62N80Q3 is suitable for applications requiring:
- High load current
- High switching frequencies
- Low voltage drop
- High-efficiency power conversion
- High switching frequency
The IXFN62N80Q3 can be used in a variety of high-power applications including DC to AC power conversion, motor control, and high-efficiency switching applications.
Working Principle
The IXFN62N80Q3 is a power FET which utilizes a p-type FET to control a large load current. The device relies on its insulated gate to control the current flowing through it. When the gate voltage is high, electrons are attracted to the gate and the p-type FET is turned on, allowing current to flow from the drain to the source. When the gate voltage is low, electrons are repelled from the gate and the FET is turned off, effectively isolating the drain from the source.
The IXFN62N80Q3 operates efficiently due to its low on-resistance and minimal gate charge. This minimizes the dissipation power, which improves efficiency and allows the device to operate over a wide range of input voltages and frequencies. The low input capacitance and fast switching speed of the IXFN62N80Q3 make it ideal for high-efficiency, high-frequency applications.
Conclusion
The IXFN62N80Q3 is a power FET designed for applications requiring high current loads and high efficiency. Its insulated gate and low on-resistance allow it to operate efficiently and enable the device to operate over a wide input voltage range and frequencies. Its low input capacitance and fast switching speed make it ideal for high-efficiency, high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| IXFN62N80Q3 | IXYS | -- | 58 | MOSFET N-CH 800V 49A SOT-... |
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