Allicdata Part #: | IXFT40N30QTR-ND |
Manufacturer Part#: |
IXFT40N30Q TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 300V 40A TO268 |
More Detail: | N-Channel 300V 40A (Tc) 300W (Tc) Surface Mount TO... |
DataSheet: | IXFT40N30Q TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 4mA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 (IXFT) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3560pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 85 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IXFT40N30Q TR is a transistor that belongs to the group of Field Effect Transistors (FETs), particularly the single-type Mosfet (Metal Oxide Semiconductor Field Effect Transistor) family. This particular transistor is a low voltage N-channel MOSFET with a breakdown voltage of 100 volts and a maximum power rating of 40 watts. It is a highly-efficient type of transistor that has a wide range of applications in both digital and analog circuits.
The IXFT40N30Q TR transistor is mainly used in a variety of digital electronic circuits including logic integrated circuits, microcontrollers, and digital gates. In particular, it is often used as an addressing circuit or multiplexer, as it can easily be adjusted to perform different functions and provide a greater functionality than traditional single transistors. This type of transistor is typically used in computers, mobile phones, and other digital electronics.
The IXFT40N30Q TR transistor can also be found in a variety of analog circuits, primarily in audio and RF applications. In audio applications, the transistor is used for amplifying the signal of the audio source. This type of transistor is also often used in radio-frequency applications, such as for the modulation of signals for communication purposes.
In terms of the IXFT40N30Q TR transistor’s working principle, it works on the principle of varying the voltages to the gate of the transistor. By manipulating the voltage at the gate of the transistor, it is possible to control the conductivity of the channel, resulting in a change in the current flowing through the semiconductor channel. This is known as the drain-to-source voltage, or the VDS, and is the mechanism behind the functioning of the transistor.
This type of transistor also works on the principle of “source-to-gate” voltage, which is known as the VGS. By manipulating the voltage of the gate, it is possible to control the current that flows through the junction, allowing for precise control over the circuits. This is an important part of the functioning of the IXFT40N30Q TR transistor.
Finally, the IXFT40N30Q TR transistor also has a high-speed switching action, allowing it to switch from low to high states with an extremely fast time. This makes the transistor a highly efficient device, as it can be used to control signals in a very precise and efficient manner. This is useful for a variety of applications, such as in sound amplifiers, communications systems, and other digital electronics.
In conclusion, the IXFT40N30Q TR transistor is a high-efficiency and highly-versatile type of transistor. It is used in a wide variety of digital and analog applications, and works on the principle of manipulating the voltage at the gate of the transistor to regulate its conductivity. It also has a high-speed switching action, allowing for a precise and efficient control of signals in digital electronics. This makes the IXFT40N30Q TR an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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IXFT74N20 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 200V 74A TO-2... |
IXFT80N10Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 100V 80A TO-2... |
IXFT80N15Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 150V 80A TO-2... |
IXFT80N20Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 200V 80A TO-2... |
IXFT12N100Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1000V 12A TO2... |
IXFT15N100Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1000V 15A TO-... |
IXFT16N90Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 16A TO-2... |
IXFT17N80Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 800V 17A TO-2... |
IXFT20N60Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 600V 20A TO-2... |
IXFT20N80Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 800V 20A TO-2... |
IXFT21N50Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 21A TO-2... |
IXFT26N50Q | IXYS | -- | 1000 | MOSFET N-CH 500V 26A TO-2... |
IXFT26N60Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 600V 26A TO-2... |
IXFT60N25Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 250V 60A TO-2... |
IXFT74N20Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH TO268 |
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IXFT40N30Q TR | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 40A TO26... |
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