Allicdata Part #: | IXFX32N50-ND |
Manufacturer Part#: |
IXFX32N50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 32A PLUS247 |
More Detail: | N-Channel 500V 32A (Tc) 360W (Tc) Through Hole PLU... |
DataSheet: | IXFX32N50 Datasheet/PDF |
Quantity: | 1000 |
Series: | HiPerFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 300nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5450pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 360W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PLUS247™-3 |
Package / Case: | TO-247-3 |
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The IXFX32N50 is a single N-channel power MOSFET developed by IXYS semiconductors. It is perfect for power circuits that require high performance, low loss, and high reliability. The device is robust enough for industrial, commercial and military applications. It features high operating temperature, high-efficiency efficiency cascodes, fast rising and falling times, low on-resistance, and low thermal resistance.
The IXFX32N50 is suitable for applications such as synchronous rectification, motor control, lighting and power supplies. It is specially designed for switching applications and can handle high peak blocking voltages up to 32V, sustained currents up to 100A and up to 70A peak pulses. It also features a maximum power dissipation of 38.6W, typical on-resistance of 13.2mΩ, and low quiescent gate charge of 8nC. The IXFX32N50 is particularly well-suited for use in vehicle alternators, lighting controls, and motor controllers.
The working principle of the IXFX32N50 MOSFET is based on the basic operation of a junction field-effect transistor (JFET). When a voltage is applied to the gate terminal, it affects the electric field around the source and drain contacts and modulates the flow of current through the channel. When the voltage is increased, the electric field extends, increasing the resistance across the channel and reducing the current flow. Conversely, when the voltage is reduced, the electric field contracts, lowering the resistance across the channel and increasing the current.
The IXFX32N50 features an enhanced drain-source voltage rating (Vdss) of up to 32V, a low gate-source threshold voltage (Vgs) of 0.8V, an average on-resistance of 13.2mΩ, a maximum continuous drain current of 100A, and a maximum pulse current of 70A. It has a maximum RDSon of 13.2mΩ and a maximum power dissipation of 38.6W. This device is particularly useful for synchronous rectification during peak power and motor control in a variety of applications. It also offers excellent thermal stability and reliability.
The IXFX32N50 is a popular choice for power management applications requiring high performance, low-loss and high reliability. Its high operating temperature, fast recovery times, low on-resistance and low thermal resistance make it suitable for industrial, commercial, and military applications. This device is perfect for switching applications and can handle high peak blocking voltages up to 32V, sustained currents up to 100A and up to 70A peak pulses. It also features a maximum power dissipation of 38.6W, typical on-resistance of 13.2mΩ, and low quiescent gate charge of 8nC.
The specific data is subject to PDF, and the above content is for reference
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