IXGP12N100A

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The IXGP12N100A is a series of high-performance, high-voltage insulated-gate bipolar transistors (IGBTs) produced by Infineon Technologies. As a single IGBT, these parts are designed to be used in applications where high current and power density are required. The device was designed for high speed switching in applications such as solar inverters and induction heating.

The working principle of an IGBT is fairly simple. Like other transistors, they are made up of semiconductor material. In the case of an IGBT, this material is p-type semiconductor material, which is sandwiched between two n-type semiconductor layers. This sandwich is referred to as the "body" of the IGBT. The body is then connected to a gate terminal, which is connected to a voltage source that controls its on/off state. When the voltage source is turned on, the gate generates an electric field, which causes the current to flow through the body.

The IXGP12N100A is a 1200V rated part that can be used in many applications due to its high current and power density. The device features a maximum collector-emitter voltage of 1200V and a maximum collector current of 285A. It also has a minimum junction-emitter voltage of 11V and a maximum junction-emitter voltage of 5V. The device is rated for a maximum switching frequency of 300kHz and has a typical junction temperature of 75°C.

The design of the IXGP12N100A also makes it well-suited for use in a wide range of applications. It features a low gate drive power and low body diode reverse recovery time, making it suitable for high-speed switching applications. The device also offers an enhanced avalanche capability, making it well-suited for high-voltage designs. It also has a low on-state resistance, making it suitable for applications requiring high efficiency.

The IXGP12N100A is an ideal choice for applications that require high current and power density. Its 1200V rating and 285A collector current make it well-suited for applications such as solar inverters and induction heating. Its low gate drive power and low body diode reverse recovery time make it suitable for high-speed switching applications. Its enhanced avalanche capability and low on-state resistance make it suitable for applications requiring high efficiency. All of these features make the IXGP12N100A an excellent choice for a wide range of applications.

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