IXGP12N120A2 Allicdata Electronics
Allicdata Part #:

IXGP12N120A2-ND

Manufacturer Part#:

IXGP12N120A2

Price: $ 1.77
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1200V 24A 75W TO220
More Detail: IGBT PT 1200V 24A 75W Through Hole TO-220AB
DataSheet: IXGP12N120A2 datasheetIXGP12N120A2 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
50 +: $ 1.60751
Stock 1000Can Ship Immediately
$ 1.77
Specifications
Power - Max: 75W
Base Part Number: IXG*12N120
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 960V, 12A, 100 Ohm, 15V
Td (on/off) @ 25°C: 15ns/680ns
Gate Charge: 24nC
Input Type: Standard
Switching Energy: 5.4mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Current - Collector Pulsed (Icm): 48A
Current - Collector (Ic) (Max): 24A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGP12N120A2 is a 1200 V, 9 A insulated gate bipolar transistor, more commonly referred to as an IGBT. It is one of a wide range of IGBTs produced by Infineon, and can be used for a wide variety of applications. This particular IGBT has a low saturation voltage, high switching speed, and a low output capacitance which makes it ideal for use in numerical controls, motor control systems, and other applications where fast switching and high voltage supplies are required.

An IGBt is a combination of an insulated gate field effect transistor (IGFET) and a bipolar transistor. It combines the advantages of both types of devices, allowing for fast switching, high voltage operation, and low power losses at the same time. IGBTs work on the principle of a controllable junction, allowing current to flow when appropriate gate control voltages and currents are applied, resulting in a low turn-on and turn-off time.

The IXGP12N120A2 is an IGBT of the single type, which means that it consists of a single chip with both a p-type and an n-type region. This results in fewer parasitic capacitances, and a lower gate drive requirement than more complex IGBT modules. This makes the IXGP12N120A2 suitable for applications involving high switching frequencies, such as brushless DC motor control.

The IXGP12N120A2 also has an inverse diode built in. This allows it to provide voltage balancing during switching, by preventing arcing or ground bounce. It also helps to reduce power losses by allowing the current to flow through alternate paths when the IGBT is turned off. This helps to improve the efficiency of the device.

The IXGP12N120A2 can be used in a variety of applications. It is suitable for the controlling of high-power devices, such as motors, contactors, and solenoids. It can also be used in solar and renewable energy converters, soft starters, and other circuit designs where fast-switching and high-voltage are required. Its wide range of features also make it a suitable choice for automotive applications.

In summary, the IXGP12N120A2 is a single IGBT which is suitable for a wide range of applications, from motor control to renewable energy converters. It has a low saturation voltage, fast switching time, and low output capacitance which make it an ideal choice for those requiring fast response and high voltage operation. Its inverse diode also allows it to reduce power losses, making it even more efficient.

The specific data is subject to PDF, and the above content is for reference

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