IXGP12N60C

Power - Max:	100W
Base Part Number:	IXG*12N60
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	480V, 12A, 18 Ohm, 15V
Td (on/off) @ 25°C:	20ns/60ns
Gate Charge:	32nC
Input Type:	Standard
Switching Energy:	90µJ (off)
Series:	HiPerFAST™
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 12A
Current - Collector Pulsed (Icm):	48A
Current - Collector (Ic) (Max):	24A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction

IXGP12N60C is a type of transistor in the field of IGBTs (Insulated Gate Bipolar Transistors) and specifically in the category of single transistors. In today\'s world, it is a one of a kind, leading edge technology that is used in a variety of applications.

Application Field of IXGP12N60C

IXGP12N60C is used in applications ranging from power electronics, such as motor drives, solar inverters and power factor correction, to other high-end applications. This type of transistor is also often used in the automotive sector, including LED lighting and electric vehicle applications. Its high speed, low on-state resistance, low-inductance package and low EMI (electromagnetic interference) emission makes it ideal for use in industrial automation, machine-to-machine communication and robust communication networks.

Working Principle

The working principle of IXGP12N60C is based on its unique bipolar structure, using gate-controlled current flow instead of conventional gate-controlled voltage. It has two separate internal structures that help it operate with greater efficiency and speed than typical MOSFETs (Metal Oxide Semiconductor Field Effect Transistors).First, the Gate Controlled Current (GCC) structure helps reduce the on-state resistance of the transistor, providing a high switching frequency and low power consumption. The second structure, the integration of an insulated gate electrode, helps reduce the gate charge time and increase the speed of the transistor.Because of its high switching frequency, the IXGP12N60C can handle high-power applications with much greater efficiency. Moreover, the transistor is designed to be capable of switching a wide range of currents and voltages. The combination of its high-speed switching and low on-state resistance makes the IXGP12N60C the ideal choice for high-end power electronics applications.

Conclusion

The IXGP12N60C transistor is a single transistor within the field of IGBTs that can be used for a variety of applications. Its unique bipolar structure, which uses gate-controlled current flow instead of conventional gate-controlled voltage, enables higher speed operations, low on-state resistance, low-inductance package, low EMI emission, and consequently more efficient system operation. As a result of its wide range of capabilities and numerous advantages, it is the ideal choice for high-end power electronics applications.

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