| Allicdata Part #: | IXGP15N100C-ND |
| Manufacturer Part#: |
IXGP15N100C |
| Price: | $ 3.85 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | IGBT 1000V 30A 150W TO220AB |
| More Detail: | IGBT 1000V 30A 150W Through Hole TO-220AB |
| DataSheet: | IXGP15N100C Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 50 +: | $ 3.49763 |
| Power - Max: | 150W |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Test Condition: | 960V, 15A, 10 Ohm, 15V |
| Td (on/off) @ 25°C: | 25ns/150ns |
| Gate Charge: | 73nC |
| Input Type: | Standard |
| Switching Energy: | 850µJ (off) |
| Series: | Lightspeed™ |
| Vce(on) (Max) @ Vge, Ic: | 3.5V @ 15V, 15A |
| Current - Collector Pulsed (Icm): | 60A |
| Current - Collector (Ic) (Max): | 30A |
| Voltage - Collector Emitter Breakdown (Max): | 1000V |
| IGBT Type: | -- |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
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IXGP15N100C is a type of power transistor, specifically a Insulated Gate Bipolar Transistor (IGBT). It is a single-channel IGBT and can be used to control the switching of high power circuits. With its high voltage, current and temperature ratings, it is suitable for a wide range of applications such as power converters, welding equipment, inverters and many other power electronics applications.
The IXGP15N100C is able to dissipate up to 100°C junction temperature. Its maximum permissible DC collector current is 15A while its ON-state saturation voltage is 1.2V at a collector current of 6A and gate voltage of 10V. It has a peak repetitive di/dt of 310A/µs and a thermal resistance junction to case of 44°C/W.
The IXGP15N100C has a unique working principle compared to other IGBTs. It uses an isolated substrate to achieve efficient switching of large currents. The substrate isolates the gate driver from the high current path of the collector and emitter. This isolation provides a low thermal resistance between the chip and the external circuit which allows for faster switching and higher power efficiency.
Since the IXGP15N100C is able to control very high power, it is commonly used in applications such as rail transportation, UPS systems, renewable energy systems, industrial inverters, motor drives and welding machines. Its wide temperature range and high switching speed make it ideal for these kinds of applications.
This type of IGBT is also able to integrate several integrated protection features such as slow turn-off protection (STOP), over-voltage protection (UVP) and over-temperature protection (OTP). These protective features make it a safe and reliable solution for high power applications.
Overall, the IXGP15N100C is a highly reliable and efficient power transistor suitable for controlling very high power circuits. Its ability to dissipate large amounts of heat, high switching speed and integrated protection features make it an ideal for applications such as industrial inverters, motor drives and welding machines.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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IXGP15N100C Datasheet/PDF