IXGP7N60BD1 Allicdata Electronics
Allicdata Part #:

IXGP7N60BD1-ND

Manufacturer Part#:

IXGP7N60BD1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 14A 80W TO220
More Detail: IGBT 600V 14A 80W Through Hole TO-220AB
DataSheet: IXGP7N60BD1 datasheetIXGP7N60BD1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 300µJ (off)
Base Part Number: IXG*7N60
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 35ns
Test Condition: 480V, 7A, 18 Ohm, 15V
Td (on/off) @ 25°C: 10ns/100ns
Gate Charge: 25nC
Input Type: Standard
Series: HiPerFAST™
Power - Max: 80W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Current - Collector Pulsed (Icm): 56A
Current - Collector (Ic) (Max): 14A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGP7N60BD1 is an innovative and widely used type of transistor known as an Insulated Gate Bipolar Transistor (IGBT). It is a type of transistor that is used to control both the voltage and current flow in an electronic circuit. When used in the right application, it has the ability to provide very high levels of power and performance. This makes it an ideal choice for many applications where high performance is required, such as motor controls and power switching.

The IXGP7N60BD1 is a single-pole IGBT transistor that is designed to work with a 250V collector-emitter voltage rating, along with a gate-emitter voltage rating of 6.0 volts and a typical maximum collector current of 30A. It is capable of switching up to 1200V. The maximum forward voltage ratings are 1.2V and 2.2V.

The IXGP7N60BD1 has a wide range of applications due to its excellent performance characteristics. It can be used in motor control applications, such as variable speed drives, braking and acceleration control in industrial products, or in electrical power switch applications. It can also be used in high-current power distribution systems and can be employed in a variety of other applications, such as semiconductor wafer fabrication equipment and industrial automated test systems.

The principle behind the operation of an IGBT is an insulated-gate field effect where the negative gate voltage controls the channel between the source and drain. As the negative voltage is applied to the gate, the current flows from the source to the drain and the transistor is activated. The higher the negative gate voltage, the larger the current flow and the faster the transistor switches. The device can also be used in reverse, with a positive voltage applied to the gate, where it will act as an open switch and can be used to protect circuits.

The IXGP7N60BD1 offers a number of advantages over other types of transistors in terms of performance, size, and cost. It has excellent rise and fall times, low power consumption, and an extended temperature range. It can be used in high-current, high-volume applications due to its excellent thermal characteristics and cost-effectiveness. Furthermore, its small size and low weight make it suitable for space-constrained applications.

The IXGP7N60BD1 is a reliable and efficient type of transistor that has been widely adopted in many applications due to its excellent performance characteristics. It is an ideal choice for a wide range of high-power applications and can be employed in motor control, power distribution and semiconductor wafer fabrication applications, as well as other industrial applications.

The specific data is subject to PDF, and the above content is for reference

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