IXTA180N10T Allicdata Electronics
Allicdata Part #:

IXTA180N10T-ND

Manufacturer Part#:

IXTA180N10T

Price: $ 3.31
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 100V 180A TO-263
More Detail: N-Channel 100V 180A (Tc) 480W (Tc) Surface Mount T...
DataSheet: IXTA180N10T datasheetIXTA180N10T Datasheet/PDF
Quantity: 2924
1 +: $ 3.00510
10 +: $ 2.68065
100 +: $ 2.19813
500 +: $ 1.77995
1000 +: $ 1.50116
Stock 2924Can Ship Immediately
$ 3.31
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXTA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 480W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
Series: TrenchMV™
Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTA180N10T is a field-effect transistor (FET) that offers outstanding switching performance and low on-resistance. It is a type of MOSFET (metal-oxide-semiconductor FET) that has a single gate, that can be either p-type (positive) or n-type (negative). This makes the IXTA180N10T suitable for a variety of applications.

The working principle of a MOSFET involves two primary operations: the formation of a conductive channel between the source and drain terminals; and the control of that conductive channel by the voltage of the gate. When the gate voltage is low, there is no current flow between the source and the drain; when the gate voltage is higher, a conductive channel opens and current is allowed to pass through. In the IXTA180N10T, the gate is p-type (positive), meaning that a positive voltage must be applied to the gate for current to flow.

One of the primary applications for the IXTA180N10T is as a switch in power supplies. The IXTA180N10T can be used to switch between different power supply voltages, allowing a single supply to be used for multiple purposes. The IXTA180N10T can also be used in circuits to control the current flow, preventing excessive amounts of current from passing through in a particular circuit. In addition, the IXTA180N10T can be used as an amplifier, allowing for improved signal transmission over long distances.

The IXTA180N10T is also ideal for use in systems that require a high current capacity with low on-resistance. This makes it ideally suited for use in applications where power efficiency is important, such as automotive applications. The IXTA180N10T can be used to control the power flow to an electric motor, for example, allowing a motor to run at different speeds with efficient power transfer. In addition, the IXTA180N10T can be used in solar energy systems, to improve the efficiency of energy transfer.

Finally, the IXTA180N10T can also be used as a part of a power-saving circuit. This can be done by using the IXTA180N10T to switch between different voltages for different parts of the circuit, allowing parts to be run at lower voltages when not in use, thereby reducing the amount of power used. This is especially useful for complex systems where the power consumption must be tightly controlled.

In conclusion, the IXTA180N10T is a versatile and useful FET suited to a variety of applications. Its low on-resistance and easy switching operations make it ideal for use in power supplies, as a switch and amplifier, in automotive systems, solar energy systems, and power-saving circuits. With its high current capacity and low on-resistance, the IXTA180N10T provides outstanding performance in just about any application.

The specific data is subject to PDF, and the above content is for reference

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