Allicdata Part #: | IXTP18N60PM-ND |
Manufacturer Part#: |
IXTP18N60PM |
Price: | $ 3.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH TO-220 |
More Detail: | N-Channel 600V 9A (Tc) 90W (Tc) Through Hole TO-22... |
DataSheet: | IXTP18N60PM Datasheet/PDF |
Quantity: | 1000 |
150 +: | $ 2.74768 |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220 Isolated Tab |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 49nC @ 10V |
Series: | Polar™ |
Rds On (Max) @ Id, Vgs: | 420 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTP18N60PM MOSFET is a short channel low-voltage, high speed device with a very low gate threshold voltage. It is suitable for a wide variety of analog, digital and power applications. The device is manufactured using the 25V trench gate process, which gives the device excellent performance and reliability. In addition, the IXTP18N60PM features a wide drain current range and a low on-resistance.
The IXTP18N60PM is an insulated-gate field-effect transistor (IGFET) that operates as a voltage-controlled switch. It is comprised of four terminals: source, gate, drain, and body (also known as substrate or bulk). When a negative voltage is applied to the gate terminal, it repels electrons from the substrate, which causes the channel between the source and the drain terminals to become conductive. This device is designed to be used in both enhancement and depletion mode, which means that it can be used in both switching and linear applications. When operated in enhancement mode, the device can be used as an amplifier and a variable gain device.
The IXTP18N60PM is a popular choice in power applications due to its low on-resistance, fast switching speed, and low gate charge characteristics. It can be used to regulate the voltage in switching power supplies, as well as drive inductive loads such as relays and motors in applications such as motor control. Additionally, it can be used in high-frequency switching applications such as DC-DC converters and pulse-width-modulators.
The IXTP18N60PM is also suitable for analog applications. Its low gate threshold voltage and low gate charge makes it suitable for use in high frequency circuits, such as oscillators and signal generators. Additionally, it can be used for level shifting and signal conditioning. It can also be used for analog signal amplification, or to drive other analog circuits.
The IXTP18N60PM is an excellent choice for both power and analog applications. Its low gate threshold voltage, wide drain current range and low on-resistance make it a versatile device that can be used in a variety of applications. With its excellent performance and reliability, the IXTP18N60PM is sure to make a great addition to any design engineer’s arsenal.
The specific data is subject to PDF, and the above content is for reference
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