IXXN110N65C4H1 Allicdata Electronics
Allicdata Part #:

IXXN110N65C4H1-ND

Manufacturer Part#:

IXXN110N65C4H1

Price: $ 16.56
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 650V 210A 750W SOT227B
More Detail: IGBT Module PT Single 650V 210A 750W Chassis Mount...
DataSheet: IXXN110N65C4H1 datasheetIXXN110N65C4H1 Datasheet/PDF
Quantity: 114
1 +: $ 15.05700
10 +: $ 13.92680
25 +: $ 12.79730
100 +: $ 11.89410
250 +: $ 10.91540
Stock 114Can Ship Immediately
$ 16.56
Specifications
Series: GenX4™, XPT™
Part Status: Active
IGBT Type: PT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 210A
Power - Max: 750W
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
Current - Collector Cutoff (Max): 50µA
Input Capacitance (Cies) @ Vce: 3.69nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Base Part Number: 110N65
Description

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IXXN110N65C4H1 is a type of device belonging to the family of Insulated Gate Bipolar Transistors (IGBTs). This particular type of IGBT module is produced by ON Semiconductor and features very low losses when switching at high power levels, making it a valuable choice for various applications.The IXXN110N65C4H1 is a single-phase IGBT module consisting of two IGBTs (Insulated Gate Bipolar Transistors) and two fast-recovery diodes embedded in a plastic package. It has a very robust design and is suitable for use in high-reliability circuits.The IXXN110N65C4H1 is mainly used in automotive, industrial and consumer applications. These include motor drives, solar inverters, UPS systems, variable-speed motor controls, and power supplies for appliances. It is also used in uninterruptible power supply systems and renewable energy applications, such as wind and solar power.As far as the working principle of the IXXN110N65C4H1 is concerned, it is based on the principle of bipolar transistor amplification. When an electrical current is applied to the gate of the IGBT, it causes a change in the internal junction between the emitter and collector. This change of the junction results in an amplified current flowing through the collector, based on the amount of current that passes through the gate. The result of this is an increase in the current through the collector, which can be used to control different types of loads.Overall, the IXXN110N65C4H1 is an efficient and reliable choice for various industrial and automotive applications, and its robust design makes it a viable choice for long-term usage. It has some excellent features and offers better performance than many of its competitors.

The specific data is subject to PDF, and the above content is for reference

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