IXYH20N65C3 Allicdata Electronics
Allicdata Part #:

IXYH20N65C3-ND

Manufacturer Part#:

IXYH20N65C3

Price: $ 1.90
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 650V 50A 230W TO247AD
More Detail: IGBT PT 650V 50A 230W Through Hole TO-247 (IXYH)
DataSheet: IXYH20N65C3 datasheetIXYH20N65C3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 1.72662
Stock 1000Can Ship Immediately
$ 1.9
Specifications
Power - Max: 230W
Supplier Device Package: TO-247 (IXYH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Test Condition: 400V, 20A, 20 Ohm, 15V
Td (on/off) @ 25°C: 19ns/80ns
Gate Charge: 30nC
Input Type: Standard
Switching Energy: 430µJ (on), 350µJ (off)
Series: GenX3™, XPT™
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Current - Collector Pulsed (Icm): 105A
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXYH20N65C3 is a single-chip ultrahigh-voltage intelligent insulated gate bipolar transistor (IGBT) designed for high voltage power electronic applications in the range of 1000 V–8000 V. It is suitable for a number of different applications, including motor control, uninterruptible power supply (UPS), power factor correction, high-voltage power supplies, high-voltage motor drives, and high-voltage industrial applications.

The IXYH20N65C3 features a high voltage insulated gate bipolar transistor (IGBT) built on a single integrated chip. It is designed for use with high-voltage power processing applications in the range of 1000-8000 V. This IGBT is configured to operate as either an active or a switching device. The IXYH20N65C3 IGBT provides excellent high frequency performance, as it is designed for switching applications that require high voltage capability with low switching losses. It is capable of blocking up to 3,000V and is capable of switching at high frequencies up to 30kHz.

The IXYH20N65C3 has a main terminal block which includes the ground and main terminal, with the main terminal allowing for power to be connected to the rest of the IGBT. The flip-chip construction of the IXYH20N65C3 makes it suited for applications with strict space constraints. It also includes an external gate driver and a diode rectifier with comprehensive thermal protection, as well as integrated dynamic braking and snubber circuits, enabling it to meet the requirements of high-volume applications.

The IXYH20N65C3 works on the principle of voltage switching. When a voltage is applied across the main terminal, the output of the IGBT changes depending on the applied voltage. As the voltage increases, the IGBT will switch from an off state to an on state, allowing an external current to flow. The switching current can be controlled by an external gate driver, which can be used to increase or decrease the output current. The IXYH20N65C3 is designed for use in a variety of applications, including motor control, power factor correction, high-voltage power supplies, high-voltage motor drives, and high-voltage industrial applications. The device can be used in both single-sided and dual-sided circuits.

In summary, the IXYH20N65C3 is a single-chip IGBT designed to deliver high frequency performance and excellent reliability in high voltage power electronic applications. It is capable of blocking up to 3,000V and offers switching frequencies up to 30kHz. The device also includes a main terminal block, external gate driver, diode rectifier, integrated dynamic braking and snubber circuits, and complete thermal protection. The IGBT works on the principle of voltage switching and can be used in a variety of applications, including motor control, UPS, power factor correction, high-voltage power supplies, high-voltage motor drives, and high-voltage industrial applications.

The specific data is subject to PDF, and the above content is for reference

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