IXYX100N65B3D1 Discrete Semiconductor Products

Power - Max:	830W
Supplier Device Package:	PLUS247™-3
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	156ns
Test Condition:	400V, 50A, 3 Ohm, 15V
Td (on/off) @ 25°C:	29ns/150ns
Gate Charge:	168nC
Input Type:	Standard
Switching Energy:	1.27mJ (on), 1.37mJ (off)
Series:	GenX3™, XPT™
Vce(on) (Max) @ Vge, Ic:	1.85V @ 15V, 70A
Current - Collector Pulsed (Icm):	460A
Current - Collector (Ic) (Max):	225A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	PT
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction to the IXYX100N65B3D1

The IXYX100N65B3D1 is an Insulated Gate Bipolar Transistor (IGBT) single that is suitable for an array of applications. Specifically, it is a type of high-voltage transistor that consists of three terminals and can switch electric current flow on and off.

Application Fields of the IXYX100N65B3D1

The IXYX100N65B3D1 is commonly used as a switch in various electrical systems, such as lighting, power supplies and motor controls. It is also widely used in industrial, automotive and consumer electronics applications. It is known for its durability, high switching speed, low power consumption and low on-state voltage. In the automotive industry, the IXYX100N65B3D1 is widely used in the development of electric and hybrid vehicles. The transistor can be used in the circuit boards of on-board chargers, battery management systems and electric motor control systems, among other components.

Working Principle of the IXYX100N65B3D1

The IXYX100N65B3D1 works by controlling the flow of current using the three terminals. The transistor is composed of two silicon-controlled rectifiers (SCR) that are separated by an insulated barrier that isolates the two SCRs. The main advantages of using two SCRs is that the voltages are effectively controlled and the current flow is accurately regulated. The transistor can be triggered by either a positive voltage applied to the gate terminal or a negative voltage applied to the emitter or collector terminal. When the gate is positively triggered, a positive current flow occurs in the collector and the transistor is said to be "on". Conversely, when the gate is negatively triggered, the transistor is said to be "off".

Conclusion

The IXYX100N65B3D1 is a single IGBT transistor suitable for various applications. It is used in lighting, industrial and automotive electronics, power supplies and motor control. Its main advantages are its durability, high switching speed, low power consumption and low on-state voltage. The transistor works by controlling the flow of current using three terminals - gate, emitter and collector. It can be triggered by either a positive or a negative voltage applied to the gate or emitter or collector terminal.

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