J109 Allicdata Electronics
Allicdata Part #:

J109FS-ND

Manufacturer Part#:

J109

Price: $ 0.35
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 25V 625MW TO92
More Detail: JFET N-Channel 25V 625mW Through Hole TO-92-3
DataSheet: J109 datasheetJ109 Datasheet/PDF
Quantity: 1000
1 +: $ 0.31500
10 +: $ 0.26334
100 +: $ 0.19757
500 +: $ 0.14489
1000 +: $ 0.11196
Stock 1000Can Ship Immediately
$ 0.35
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Current - Drain (Idss) @ Vds (Vgs=0): 40mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: --
Resistance - RDS(On): 12 Ohms
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: J109
Description

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JFETs, or junction field-effect transistors, are the oldest type of field effect transistors (FETs) and they are one of the most commonly used electronic devices. As such, they are used in a variety of applications, from small-signal and power amplifiers, to analog and digital logic circuits. J109 is one type of JFET that finds use in many circuits.

The J109 is a N-channel junction field effect transistor (JFET). It comprises of a single piece of semiconductor material containing two PN junctions, one of N-type semiconductor material and the other of P-type semiconductor material, which are connected together to form an insulated gate with a gate voltage Vg. The J109 is available in a variety of packages such as dual inline package (DIP), single inline package (SIP), and surface mount (SMD). The J109 also has a wide range of operating junction temperatures ranging from -55°C to 125°C.

The working principle of a J109 is relatively simple. When a voltage is applied to the gate, a depletion region is formed between the two semiconductor junctions. This depletion region is often referred to as the “space charge” and the amount of current that can flow through the depletion region is determined by the value of the gate voltage. By varying the gate voltage, the current flow can be varied, allowing the J109 to act like a variable resistor. This makes JFETs ideal for use as voltage controlled resistors.

The J109 is also well suited for use in circuits due to its low power dissipation. This is because the J109 does not have a substrate-bias connection, like a BJT. This eliminates the need for the additional components needed for a BJT. Furthermore, the J109 is also capable of higher gain than a BJT, meaning it can be used in more complex circuits.

J109s are particularly versatile in their applications; they can be used as low noise amplifiers (LNAs), low frequency complex amplifier systems, signal delay lines, and even high voltage regulators. In LNAs, they can operate with high gain and low noise figure, making them ideal for receivers, instrumentation systems and satellite TV systems. Their low power consumption also makes them attractive for use in portable devices. In complex amplifier systems, their low signal saturation voltages are extremely useful and they can provide quick response times, making them ideal for signal delay lines.

The flexibility of the J109 means it is also used in numerous digital applications. It can be used to create a wide range of logic gates, such as AND, OR and XOR gates, or for switching applications. Furthermore, the J109 can also be used as an output driver for logic signals, providing logic-level logic signals and high current drive. The low power consumption of the J109 also makes it suitable for use in battery-powered portable devices.

The J109 is an incredibly useful device that finds a variety of applications in both digital and analog systems. It’s versatility and low power consumption make it an ideal choice for a broad range of applications. Its ability to function as a variable resistor also makes it an attractive choice for use in complex analog and digital circuits.

The specific data is subject to PDF, and the above content is for reference

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