| Allicdata Part #: | 1086-19809-ND |
| Manufacturer Part#: |
JAN1N6321 |
| Price: | $ 8.69 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | DIODE ZENER 7.5V 500MW DO35 |
| More Detail: | Zener Diode 7.5V 500mW ±5% Through Hole DO-35 |
| DataSheet: | JAN1N6321 Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 7.82103 |
| Series: | Military, MIL-PRF-19500/533 |
| Packaging: | Bulk |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 7.5V |
| Tolerance: | ±5% |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 4 Ohms |
| Current - Reverse Leakage @ Vr: | 2µA @ 5V |
| Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 1A |
| Operating Temperature: | -65°C ~ 175°C |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AH, DO-35, Axial |
| Supplier Device Package: | DO-35 |
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Laser diodes are semiconductor devices that produce light when operated at various currents and voltages. As advances in semiconductor technologies have spurred rapid growth in the field of implementing light source applications, laser diodes have become common in various laser applications in many different industries. The JAN1N6321 semiconductor is a single Zener diode that has many different applications, and this article will discuss both its application field and its working principle.
The JAN1N6321 is a semiconductor laser with single Zener diode technology that operates at a relatively low forward voltage and draws minimal current, making it an ideal diode for many different applications. It has a reverse voltage of 12 volts, a forward current of 500mA and a reverse current of 100μA. The working junction has a capacitance of 40pF and a breakdown voltage that ranges from 34 to 40 volts.
This diode is well-suited for circuits that require a low-voltage, low-current source, such as AC Adapter circuits or Battery backup systems, because of its relatively low forward voltage and its high reverse current rating. It is also commonly used in automotive ECMs, power transformers and power rectifiers, since its features make it ideal for these types of applications. The JAN1N6321 is also used in LED lighting systems and LCD displays, due to its utilization of single Zener diode technology.
The working principle of the JAN1N6321 revolves around the internal biasing of the diode. The diode is created through the formation of p-n junctions in the semiconductor material, which allows it to generate electrons when a voltage is applied across the diode terminals. The voltage at which the material breaks down is also known as the Zener voltage, and this voltage is responsible for creating the operating characteristics of the diode. When a reverse voltage exceeding the Zener voltage is applied to the diode, the diode conducts a small current and the voltage drops across the diode terminals.
The JAN1N6321 is also capable of operating in avalanche mode, which is where the reverse-applied voltage increases in amplitude until avalanche breakdown occurs and the current starts to increase exponentially. At this point, the voltage drops across the diode and the current flow is stabilized. This allows the JAN1N6321 to be used for power rectification, power regulation and voltage stabilization applications.
Overall, the JAN1N6321 semiconductor laser is an ideal diode for a wide range of applications, due to its relatively low forward voltage, relatively high reverse current rating, and its utilization of single Zener diode technology. Its capabilities also make it an ideal choice for automotive ECMs, power transformers, power rectifiers, LED lighting systems and LCD displays. Its working principle of biasing and avalanche breakdown allows it to be used in a multitude of applications, such as power rectification, power regulation and voltage stabilization.
The specific data is subject to PDF, and the above content is for reference
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JAN1N6321 Datasheet/PDF