Allicdata Part #: | 1086-2363-ND |
Manufacturer Part#: |
JAN2N5582 |
Price: | $ 7.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 50V 0.8A TO46 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 800mA 500mW Thro... |
DataSheet: | JAN2N5582 Datasheet/PDF |
Quantity: | 1000 |
105 +: | $ 6.43356 |
Series: | Military, MIL-PRF-19500/423 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AB, TO-46-3 Metal Can |
Supplier Device Package: | TO-46-3 |
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The JAN2N5582 is a two-lead type bipolar transistor designed for general purpose amplifier and switching applications. The transistor is a NPN general purpose transistor with a maximum collector-emitter voltage of 300 V and a maximum collector dissipation of 1 W. It can be used at frequencies up to 2 MHz and has a gain bandwidth product of 7.0 MHz. It features very high gain, very low turn-on voltage, and very low base current. The transistor is available in two package configurations, a dual-in-line package (DIP) and a surface mount package (SMD).
The JAN2N5582 is used in a variety of applications including power supply, amplifier, switching, and general purpose applications. It can be used in a wide range of circuits, including current mirror and current amplifier circuits. It can also be used to amplify small signals, such as those produced by transducers and sensors. Additionally, it can be used as a voltage regulator in power supply applications. In switching applications, it can be used to amplify a control signal that is used to switch a load on and off.
The working principle of the JAN2N5582 is based on the basic working principle of a bipolar transistor. Bipolar transistors are made up of two or three layers of semiconductor material, usually silicon or germanium. Each layer is doped with a different type of impurity, which creates a “P-N-P” or “N-P-N” junction. A small amount of current applied to the base contact of the transistor can control the current flowing between the collector and the emitter. When the base current is increased, more current flows between the collector and the emitter, and the transistor is in the “on” state. When the base current is decreased, the current flow is turned off and the transistor is in the “off” state.
The JAN2N5582 is an ideal transistor for general purpose, low-power and low-frequency amplifier and switching applications. It features very high gain, very low turn-on voltage, and very low base current, making it an efficient power amplifier and an excellent choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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