| Allicdata Part #: | JANS2N2221AUBC-ND |
| Manufacturer Part#: |
JANS2N2221AUBC |
| Price: | $ 136.19 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | NPN TRANSISTOR |
| More Detail: | Bipolar (BJT) Transistor NPN 50V 800mA 500mW Surf... |
| DataSheet: |  JANS2N2221AUBC Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 123.81000 |
Specifications
| Series: | Military, MIL-PRF-19500/255 |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 800mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 10µA (ICBO) |
| Power - Max: | 500mW |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 3-SMD, No Lead |
| Supplier Device Package: | 3-SMD |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The JANS2N2221AUBC is a general purpose medium power bipolar junction transistor (BJT) commonly used in many electronics applications. It is of the single type, meaning it contains a single BJT with three terminals at its base – one for a collector current, one for a base current and one for an emitter current. It is used in a variety of consumer electronics, amplifiers, power supplies, etc. It has a working voltage range of +20V to -20V and a maximum collector power dissipation of 625mW.The JANS2N2221AUBC consists of three basic parts – the base layer, the collector layer and the emitter layer. A single layer of silicon nitride, this layer is what forms the current paths within the transistor. It also forms the junction between the collector and emitter layers. The silicon forms the bulk of the material in the transistor and acts as an insulator between the layers.The two layers of the JANS2N2221AUBC act as a switch allowing current to flow either in a forward or reversed direction. When a voltage is applied to the base layer, the flow of current between the collector and emitter layers is controlled by the base voltage. If the voltage is sufficient, current will flow from the collector to the emitter, resulting in a forward flow of current. Conversely, when the voltage is reversed, current will flow from the emitter to the collector, resulting in a reverse flow of current. The resulting flow of current is what is referred to as the resistance or impedance of the transistor.When a steady state operation is used on the JANS2N2221AUBC, it can be used as an amplifier or switch to switch signals or currents. In this setup, the base voltage applied to the base layer controls the flow and resistance between the collector and emitter layers. By altering the base voltage, the amount of current that can flow between the collector and emitter layers can be precisely adjusted, allowing for the amplification of signals or currents.The JANS2N2221AUBC is an excellent choice for use in many electronics applications including audio amplification, power control, motor control, and more. Its small size and high current capacity make it a great choice for many types of applications. The wide range of working voltage and low power dissipation make it a great choice for projects requiring low power consumption. Overall, the JANS2N2221AUBC is an excellent bipolar junction transistor (BJT) choice for many different types of electronics applications and projects. With its small size and high current capacity, it is a great choice for those looking for a reliable and efficient BJT for their project. Furthermore, its low power dissipation and wide range of working voltage make it an ideal choice for projects that require low power consumption.
The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "JANS" Included word is 40
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| JANS1N6125A | Microsemi Co... | 82.94 $ | 1000 | TVS DIODE 47.1V 85.3V AXI... |
| JANS1N6116US | Microsemi Co... | 97.58 $ | 1000 | HI REL TVS |
| JANS1N6172AUS | Microsemi Co... | 109.21 $ | 1000 | TVS DIODE 136.8V 245.7V S... |
| JANS1N6142AUS | Microsemi Co... | 125.47 $ | 1000 | TVS DIODE 7.6V 14.5V C SQ... |
| JANS1N4100-1 | Microsemi Co... | 53.61 $ | 500 | DIODE ZENER 7.5V 500MW DO... |
| JANS1N4120-1 | Microsemi Co... | 53.61 $ | 498 | DIODE ZENER 30V 500MW DO3... |
| JANS1N4125UR-1 | Microsemi Co... | 66.46 $ | 500 | DIODE ZENER 47V 500MW DO2... |
| JANS1N4614-1 | Microsemi Co... | 93.56 $ | 482 | DIODE ZENER 1.8V 500MW DO... |
| JANS1N4462 | Microsemi Co... | 100.77 $ | 500 | DIODE ZENER 7.5V 1.5W DO2... |
| JANS1N4476 | Microsemi Co... | 100.77 $ | 500 | DIODE ZENER 30V 1.5W DO20... |
| JANS1N4461 | Microsemi Co... | 100.77 $ | 491 | DIODE ZENER 6.8V 1.5W DO2... |
| JANS1N6324 | Microsemi Co... | 109.54 $ | 480 | DIODE ZENER 10V 500MW DO3... |
| JANS1N4468US | Microsemi Co... | 116.33 $ | 500 | DIODE ZENER 13V 1.5W D5AZ... |
| JANS1N6328US | Microsemi Co... | 122.12 $ | 256 | DIODE ZENER 15V 500MW B-S... |
| JANS1N4568A-1 | Microsemi Co... | 152.43 $ | 480 | DIODE ZENER 6.4V 500MW DO... |
| JANS1N6320US | Microsemi Co... | 155.52 $ | 109 | DIODE ZENER 6.8V 500MW B-... |
| JANS1N4569A-1 | Microsemi Co... | 252.45 $ | 488 | DIODE ZENER 6.4V 500MW DO... |
| JANS1N4109UR-1 | Microsemi Co... | 66.46 $ | 19 | DIODE ZENER 15V 500MW DO2... |
| JANS1N4618UR-1 | Microsemi Co... | 93.6 $ | 15 | DIODE ZENER 2.7V 500MW DO... |
| JANS1N4467 | Microsemi Co... | 100.77 $ | 6 | DIODE ZENER 12V 1.5W DO20... |
| JANS1N4471US | Microsemi Co... | 116.33 $ | 3 | DIODE ZENER 18V 1.5W D5AZ... |
| JANS1N6326US | Microsemi Co... | 122.12 $ | 22 | DIODE ZENER 12V 500MW B-S... |
| JANS1N4962US | Microsemi Co... | 122.21 $ | 25 | DIODE ZENER 15V 5W D5BZen... |
| JANS1N4971US | Microsemi Co... | 122.21 $ | 6 | DIODE ZENER 36V 5W D5BZen... |
| JANS1N4972US | Microsemi Co... | 122.21 $ | 3 | DIODE ZENER 39V 5W D5BZen... |
| JANS1N4960US | Microsemi Co... | 122.21 $ | 2 | DIODE ZENER 12V 5W D5BZen... |
| JANS1N6320 | Microsemi Co... | 231.12 $ | 10 | DIODE ZENER 6.8V 500MW DO... |
| JANS1N4996US | Microsemi Co... | 268.98 $ | 10 | DIODE ZENER 22V 5W D5BZen... |
| JANS1N6318US | Microsemi Co... | 268.98 $ | 7 | DIODE ZENER 5.6V 500MW B-... |
| JANSF2N7383 | Microsemi Co... | 0.0 $ | 1000 | P CHANNEL MOSFET TO-257 |
| JANSR2N7261U | Microsemi Co... | 0.0 $ | 1000 | N CHANNEL MOSFET LCC-18N-... |
| JANSR2N7262U | Microsemi Co... | 0.0 $ | 1000 | N CHANNEL MOSFET LCC-18N-... |
| JANSR2N7268U | Microsemi Co... | 0.0 $ | 1000 | N CHANNEL MOSFET SMD-1N-C... |
| JANSR2N7269 | Microsemi Co... | 0.0 $ | 1000 | N CHANNEL MOSFET TO-254N-... |
| JANSR2N7269U | Microsemi Co... | 0.0 $ | 1000 | N CHANNEL MOSFET SMD-1N-C... |
| JANSR2N7380 | Microsemi Co... | 0.0 $ | 1000 | N CHANNEL MOSFET TO-257 R... |
| JANSR2N7381 | Microsemi Co... | 0.0 $ | 1000 | N CHANNEL MOSFET TO-257 R... |
| JANSR2N7389 | Microsemi Co... | 0.0 $ | 1000 | P CHANNEL MOSFET TO-39P-C... |
| JANSR2N7389U | Microsemi Co... | 0.0 $ | 1000 | P CHANNEL MOSFET LCC-18P-... |
| JANS2N3499L/TR | Microsemi Co... | 0.0 $ | 1000 | SMALL-SIGNAL BJTBipolar (... |
Latest Products
BC807-16W/MIX
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
CP547-MJ11015-CT
TRANS PNP DARL 30A 120V DIEBipolar (BJT)...
CP547-CEN1103-WS
TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...
TIP35C SL
TRANS GENERAL PURPOSE TO-218Bipolar (BJT...
JAN2N3634
TRANS PNP 140V 1ABipolar (BJT) Transisto...
BULB7216-1
TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...