JANTXV2N3506L

JANTXV2N3506L is a quick optimized n-channel enhancement mode Field Effect Transistor (FET) that offers low on-state resistance and fast switching speed. It is designed for high speed power switching circuit applications such as lighting, remote control, optical communication, and automotive applications. This transistor is a part of the JANTXV family which provides maximum power dissipation at 25V and 600mA output.

The JANTXV2N3506L is a single N-Channel enhanced mode MOSFET which has a breakdown voltage of 30V and a maximum drain-source voltage of 50V. Furthermore, it has a threshold voltage of 0.9V to 5V and a gate-source voltage of 20V. Its drain current is up to 600mA and its power dissipation is up to 1.05W. Other features of this transistor include a junction capacitance of 0.17 pF, a gate-source capacitance of 0.11 pF and a gate charge of 3 nC. This transistor also features an on-state resistance of 30 mΩ which provides high switching speed.

The JANTXV2N3506L can be used in a wide variety of applications. In electronic power conversion circuits, it can be used as an inverted switch for motor applications, for motor control, and for DC-DC converters. In power switching applications, it can be used as a low-side or high-side switch with built-in protection against cross-conduction. It is also used in lighting circuits such as light dimmer circuits and in automotive applications such as car engines.

The working principle of the JANTXV2N3506L transistor is based on the creation of a channel between the source and the drain of the transistor when the gate voltage exceeds the threshold voltage. When the gate voltage is negative with respect to the source voltage, the channel is cut off and the current stops flowing through the transistor. The power dissipation of the JANTXV2N3506L is controlled by varying the gate voltage which controls the carrier density in the channel.

In summary, the JANTXV2N3506L is a single N-Channel Enhanced Mode MOSFET transistor with a wide variety of applications such as motor control, lighting, and automotive applications. It offers low on-state resistance and fast switching speed and its working principle is based on the creation of a channel between the source and the drain of the transistor when the gate voltage exceeds the threshold voltage.