JANTXV2N5415 Allicdata Electronics
Allicdata Part #:

1086-21047-ND

Manufacturer Part#:

JANTXV2N5415

Price: $ 10.81
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 200V 1A TO-5
More Detail: Bipolar (BJT) Transistor PNP 200V 1A 750mW Throug...
DataSheet: JANTXV2N5415 datasheetJANTXV2N5415 Datasheet/PDF
Quantity: 1000
126 +: $ 9.82856
Stock 1000Can Ship Immediately
$ 10.81
Specifications
Series: Military, MIL-PRF-19500/485
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 200V
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Power - Max: 750mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5
Description

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The JANTXV2N5415 is an NPN bipolar junction transistor (BJT) specially designed for low noise applications. It is a single transistor that is rated for high-frequency operation and can be used in amplifier circuits and voltage-controlled oscillators. The JANTXV2N5415 has its major application field in preamplifiers, small signal amplifiers, voltage controlled oscillators and other low noise applications. It is also suitable for low voltage and low current DC applications.The JANTXV2N5415 transistor is constructed using a three-layer semiconductor material. It has a base, collector and emitter. Each layer consists of a section of semiconductor material such as silicon or germanium. The base allows current to flow from the collector to the emitter. The collector and emitter layers have opposite polarities and carry current.The JANTXV2N5415 transistor uses the base-emitter configuration. This type of configuration requires the base voltage to be larger than the emitter voltage by a threshold voltage. This means that when a voltage is applied to the base, the collector-emitter current will start to increase when the base-emitter voltage exceeds the threshold voltage. As the collector-emitter voltage increases, the current through the transistor will also increase.The JANTXV2N5415 has two regions of operation. The first region is the Active region. In the active region, the collector current is larger than the base current. This is the region for amplifying signals. The second region is the saturated region. In this region, the collector current is equal to the base current. This region is useful for switching applications.The JANTXV2N5415 is designed to operate over a wide voltage range. The minimum voltage is usually 3.0V and the maximum voltage is usually 30V. The maximum collector current is 30mA and the maximum collector-emitter voltage is typically 55V.The JANTXV2N5415 has a very low noise figure. This means that it is well suited for low noise applications. It also has a good power-current ratio and can cope with high frequency operations.In summary, the JANTXV2N5415 is a single transistor with its major application field in preamplifiers, small signal amplifiers, voltage controlled oscillators and low noise applications. It uses the base-emitter configuration and has two regions of operation. The transistor operates over a wide voltage range with a maximum collector current of 30mA and a maximum collector-emitter voltage of 55V. The JANTXV2N5415 is designed to have a very low noise figure, making it suitable for low noise applications.

The specific data is subject to PDF, and the above content is for reference

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