
Allicdata Part #: | 1086-21075-ND |
Manufacturer Part#: |
JANTXV2N5681 |
Price: | $ 24.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 100V 1A TO39 |
More Detail: | Bipolar (BJT) Transistor NPN 100V 1A 1W Through H... |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 22.26460 |
Series: | Military, MIL-PRF-19500/583 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 250mA, 2V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: | TO-39 (TO-205AD) |
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JANTXV2N5681 is a silicon bipolar NPN transistor in TO-39 metal can package, primarily designed for high voltage switching application. It is a voltage-controlled switch, which means that it can amplify the output signal by a certain amount depending on the input voltage. This allows devices like computers to control a much greater range of devices than would normally be possible without the use of a voltage amplifier. It is also a great choice for applications where high current, high voltage, low noise, low VBE, and fast switching are required.
The JANTXV2N5681 is a transistor consisting of three terminals and a substrate region, which acts as the gate between the emitter and collector. The emitter and collector are called the main terminals, and are separated by the substrate region. The base terminal enables the current flow through the JANTXV2N5681. A voltage applied to the base terminal can control the flow of current between the main terminals. In addition to its high-voltage switching capability, the transistor can also be used as an audio frequency amplifier.
The working principle of JANTXV2N5681 is quite simple. It consists of three layers of semiconductor material, the base (depletion layer), the collector (depletion layer) and the emitter (doped layer), which works together to control the current flow in the transistor. When a voltage is applied to the base, it creates an electric field which attracts electrons from the emitter to the depletion layer and then allows them to travel to the collector. This further increases the electric field that is generated and produces an amplified current amount. By changing the amount of voltage applied to the base, the current flow can be controlled as well.
JANTXV2N5681 can be used in a wide variety of applications. It is ideal for high-voltage switching, low-noise amplifiers, power supplies, switching converters, audio amplifiers, and high-speed light switches. It is especially suited for applications where high current, high voltage, and fast switching are needed. It is also used in some radar and missile guidance systems. The JANTXV2N5681 is a versatile device that can be used for virtually any switching application.
In conclusion, JANTXV2N5681 is an excellent choice for high voltage switching applications as it can handle a wide range of voltages and current. Additionally, its fast switching time and low noise performance makes it an ideal choice for audio amplifiers, power supplies, and switching converters. Its versatility and ease of use makes it a popular choice for many applications. For those looking for a reliable and versatile transistor, JANTXV2N5681 is a great option.
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