JDP2S02ACT(TPL3) Discrete Semiconductor Products |
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Allicdata Part #: | JDP2S02ACT(TPL3)TR-ND |
Manufacturer Part#: |
JDP2S02ACT(TPL3) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | DIODE PIN 30V 50MA CTS2 |
More Detail: | RF Diode PIN - Single 30V 50mA CST2 |
DataSheet: | JDP2S02ACT(TPL3) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 30V |
Current - Max: | 50mA |
Capacitance @ Vr, F: | 0.4pF @ 1V, 1MHz |
Resistance @ If, F: | 1.5 Ohm @ 10mA, 100MHz |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SOD-882 |
Supplier Device Package: | CST2 |
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The JDP2S02ACT (TPL3) is a type of diode which is used particularly in RF applications. It is a surface mount diode created to meet the high frequency needs of a number of applications.
The JDP2S02ACT (TPL3) is a low-capacitance, high-frequency Schottky diode, capable of operating at frequencies up to 65 GHz. It is a single-phase dual-rail device, with a rated power dissipation of 100 nW and an operating temperature range of -55 to +125°C.
The JDP2S02ACT (TPL3) is most commonly used in high-frequency RF applications such as RF amplifiers, RF switches and antenna systems. It is also used in high-precision frequency-selective devices and in high-speed digital systems.
The working principle of the JDP2S02ACT (TPL3) is based on the Schottky diode effect. A Schottky diode is an electronic component which is composed of two semiconductor layers. When a voltage is applied to the diode, electrons are able to move from one layer to the other, creating an electric current. The movement of electrons also creates a barrier between the layers which limits the flow of current. This is what enables the JDP2S02ACT (TPL3) to operate at high frequencies.
The JDP2S02ACT (TPL3) is a reliable and efficient diode suitable for a variety of RF applications. It has low capacitance and high frequency capability, and is capable of operating at temperatures up to 125°C. It is ideal for use in high-speed digital systems and other high-frequency applications where precision and accuracy are paramount.
The specific data is subject to PDF, and the above content is for reference
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