JDP2S02ACT(TPL3) Allicdata Electronics

JDP2S02ACT(TPL3) Discrete Semiconductor Products

Allicdata Part #:

JDP2S02ACT(TPL3)TR-ND

Manufacturer Part#:

JDP2S02ACT(TPL3)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: DIODE PIN 30V 50MA CTS2
More Detail: RF Diode PIN - Single 30V 50mA CST2
DataSheet: JDP2S02ACT(TPL3) datasheetJDP2S02ACT(TPL3) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 30V
Current - Max: 50mA
Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
Resistance @ If, F: 1.5 Ohm @ 10mA, 100MHz
Operating Temperature: 150°C (TJ)
Package / Case: SOD-882
Supplier Device Package: CST2
Description

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The JDP2S02ACT (TPL3) is a type of diode which is used particularly in RF applications. It is a surface mount diode created to meet the high frequency needs of a number of applications.

The JDP2S02ACT (TPL3) is a low-capacitance, high-frequency Schottky diode, capable of operating at frequencies up to 65 GHz. It is a single-phase dual-rail device, with a rated power dissipation of 100 nW and an operating temperature range of -55 to +125°C.

The JDP2S02ACT (TPL3) is most commonly used in high-frequency RF applications such as RF amplifiers, RF switches and antenna systems. It is also used in high-precision frequency-selective devices and in high-speed digital systems.

The working principle of the JDP2S02ACT (TPL3) is based on the Schottky diode effect. A Schottky diode is an electronic component which is composed of two semiconductor layers. When a voltage is applied to the diode, electrons are able to move from one layer to the other, creating an electric current. The movement of electrons also creates a barrier between the layers which limits the flow of current. This is what enables the JDP2S02ACT (TPL3) to operate at high frequencies.

The JDP2S02ACT (TPL3) is a reliable and efficient diode suitable for a variety of RF applications. It has low capacitance and high frequency capability, and is capable of operating at temperatures up to 125°C. It is ideal for use in high-speed digital systems and other high-frequency applications where precision and accuracy are paramount.

The specific data is subject to PDF, and the above content is for reference

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