Allicdata Part #: | KSC1393YTA-ND |
Manufacturer Part#: |
KSC1393YTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANSISTOR NPN 30V 20MA TO-92 |
More Detail: | RF Transistor NPN 30V 20mA 700MHz 250mW Through Ho... |
DataSheet: | KSC1393YTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Frequency - Transition: | 700MHz |
Noise Figure (dB Typ @ f): | 2dB ~ 3dB @ 200MHz |
Gain: | 20dB ~ 24dB |
Power - Max: | 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 90 @ 2mA, 10V |
Current - Collector (Ic) (Max): | 20mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | KSC1393 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The KSC1393YTA is a RF (Radio Frequency) bipolar junction transistor (BJT) designed for applications requiring high frequency and good gain linearity. This model can be used in a variety of similar applications, including amplifiers, oscillators, oscillator filters, and transmitters.
The KSC1393YTA contains three terminals: an emitter (E), collector (C), and base (B). The E terminal is the negative terminal of the device, used to inject charge carriers (electrons or holes) into an active region of the device. The C terminal is the positive terminal of the device, used to collect charge carriers. The B terminal is used to control the current flow between the E and C terminals.
To explain the working principle of the KSC1393YTA, we can look at the process of how electrons and holes spread through the device. When a voltage is applied to the E terminal, a small shift in energy occurs, which creates an area in which electrons and holes can move. These electrons and holes then move towards the B and C terminals respectively, which causes a current flow between the two terminals.
The gain of the device, which is the ratio of the output current to the input current, is determined by the width and length of the active region on the transistor\'s surface. The gain is also affected by the doping level of the transistor, which is the concentration of dopants in the active region.
The KSC1393YTA also has several design features that make it attractive for RF applications. These include low noise, high frequency performance, good linearity, and high breakdown voltage. The device also has a relatively low thermal resistance and is relatively easy to mount.
In conclusion, the KSC1393YTA is a RF bipolar junction transistor designed for applications requiring high frequency and good gain linearity. The device has several design features that make it attractive for RF applications, such as low noise, high frequency performance, good linearity, and high breakdown voltage. Its working principle is based on the principle of electron and hole movement, which facilitates a current flow between the E and C terminals.
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