KSP05TA Allicdata Electronics

KSP05TA Discrete Semiconductor Products

Allicdata Part #:

KSP05TATB-ND

Manufacturer Part#:

KSP05TA

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN 60V 500mA 100MHz 625m...
DataSheet: KSP05TA datasheetKSP05TA Datasheet/PDF
Quantity: 1000
8000 +: $ 0.02998
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: KSP05
Description

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KSP05TA components are transistors usually used for a variety of analog and digital applications. It is a Bipolar type, single transistor with high collector current and low base-emitter voltage. It is often used in a variety of circuits, particularly high-voltage, high-current switching devices. In this article, we will discuss its application field and working principle.

The KSP05TA transistor is mainly used in power control, switching applications, and amplifier circuits. Its main application areas include: the high-voltage power supply design, power management systems, power conversion, spaceflight, instrumentation, automotive electronics, industrial automation, and medical electronics applications.

The KSP05TA is a three-terminal device with a collector base, emitter, and base pins. It has a collector-base breakdown voltage of 100 V, a single pulse avalanche voltage of 150 V, and a current amplification factor (Ft) of around 100MHz. It has a low power consumption of 650Mw and can be used in both linear and nonlinear applications. The collector base leakage current is very low, ensuring efficient power management. The KSP05TA has a very high input resistance of 1 gigaohm and an output current of 4.5 A.

The working principle of the KSP05TA involves a base-emitter voltage of around 0.7V, which is applied to the collector-base junction. This causes a current to flow from the base to the collector. As the current flows, it increases the voltage on the collector and the current gain of the transistor is maintained. When the base-emitter voltage exceeds the 0.7V, more current flows from the base to the collector, increasing the collector voltage and the current gain of the transistor.

The KSP05TA also contains a group of electrodes at the collector called the base arc electrodes. These electrodes, in combination with the collector-base junction, allow the KSP05TA to turn on and off fast. This makes it ideal for a variety of high current switching applications.

The KSP05TA is a reliable, low-cost, fast switching transistor that is ideal for use in applications where performance and reliability are critical. It can also provide high current capabilities and fast switching times. With its reliable operation, low power consumption and low cost, the KSP05TA is an excellent choice for a variety of high-voltage power supply design, power management systems, power conversion, spaceflight, instrumentation, automotive electronics, industrial automation, and medical electronics applications.

The specific data is subject to PDF, and the above content is for reference

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