| Allicdata Part #: | M29W160ET90N1-ND |
| Manufacturer Part#: |
M29W160ET90N1 |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 16M PARALLEL 48TSOP |
| More Detail: | FLASH - NOR Memory IC 16Mb (2M x 8, 1M x 16) Paral... |
| DataSheet: | M29W160ET90N1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NOR |
| Memory Size: | 16Mb (2M x 8, 1M x 16) |
| Write Cycle Time - Word, Page: | 90ns |
| Access Time: | 90ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | 0°C ~ 70°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package: | 48-TSOP |
| Base Part Number: | M29W160 |
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M29W160ET90N1 is a kind of memory integrated circuit developed by STMicroelectronics. It is a type of NAND Flash memory which uses a 1.8V (Volt) supply and provides tremendous storage capacity in a 16Mbit density, while taking up a modest footprint on a computer\'s motherboard. It is widely used in both consumer and industrial applications.
The M29W160ET90N1 offers some key features that make it an attractive choice for memory storage applications. The chip features an erase/program cycle time of 90ns, which makes it significantly faster than most existing flash memories. Additionally, it has a 100 megabit per second transfer rate, making it a very fast memory storage solution. Furthermore, it has an industry-leading data retention of 20 years as well as an endurance rating of up to 100,000 program/erase cycles.
The working principle of the M29W160ET90N1 is similar to other NAND-type flash memories. It is an array of floating gate transistors, which are connected in a way that resembles a typical logic gate. A positive gate voltage is applied to one side of the transistor array, while a negative gate voltage is applied to the other side. When data is written to a memory cell, a voltage is sent to the cell, which charges the floating gate. When the gate is charged, a current is created between the two voltage sources, which serves as the data written to the cell. When the data is read from a memory cell, the current causes an amplifier to generate an output signal indicating the state of the memory cell.
The M29W160ET90N1 is primarily used in embedded systems, such as digital video, digital audio, and other digital multimedia applications. It is also commonly used in automotive infotainment systems and other mobile devices, as it offers a relatively fast access time while taking up minimal space on the motherboard. Furthermore, the chip is ideal for wearable devices, portable memory solutions and advanced multimedia solutions.
The M29W160ET90N1 is also widely used in industrial applications, such as monitoring and control systems, automotive electronics and other industrial automation processes. Its fast read and write speeds make it a great choice for industrial applications that require frequent data storage operations, such as in real-time operations and data logging.
In conclusion, the M29W160ET90N1 is an excellent choice for a wide range of memory storage applications, from consumer and industrial applications to embedded systems and mobile devices. It offers a fast program/erase cycle time, a 100 megabit per second transfer rate and an impressive data retention rating of 20 years. Ultimately, this makes the M29W160ET90N1 the perfect choice for a wide variety of memory applications.
The specific data is subject to PDF, and the above content is for reference
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M29W160ET90N1 Datasheet/PDF