| Allicdata Part #: | M29W256GH70N3E-ND |
| Manufacturer Part#: |
M29W256GH70N3E |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 256M PARALLEL 56TSOP |
| More Detail: | FLASH - NOR Memory IC 256Mb (32M x 8, 16M x 16) Pa... |
| DataSheet: | M29W256GH70N3E Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NOR |
| Memory Size: | 256Mb (32M x 8, 16M x 16) |
| Write Cycle Time - Word, Page: | 70ns |
| Access Time: | 70ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 125°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package: | 56-TSOP |
| Base Part Number: | M29W256 |
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The M29W256GH70N3E is a high-density Flash memory device. It is used in a variety of applications including embedded systems and consumer electronics. It is a non-volatile memory device that stores data even when power is off.
The M29W256GH70N3E is a multi-level cell (MLC) type NAND Flash designed for high density applications. It features a 70 nanometer process technology and is available in 16 GB and 32 GB densities. It has a maximum random read speed of 200 MHz, write speed of 80MHz, and program speed of 25MHz.
The main features of the M29W256GH70N3E include dynamic cost savings, durability, and high performance. The device has a built-in ECC engine that can correct up to 24 bit errors and is backed by Advanced Wear Levelling to extend device life. It also supports On-die Error Correction Code (ECC) and protects data against sudden power failure through Bad Block Management.
The M29W256GH70N3E is suitable for a range of different applications, including portable and consumer electronics, automotive, wireless communications, and industrial control. It can be used in USB and memory cards, embedded systems, portable media players, and other consumer electronic products.
The working principle behind the M29W256GH70N3E is based on NAND Flash technology. The device is composed of cells of floating gate transistors which are linked together. Data is stored by electronically charging one or more of the cells\' floating gates, which creates a potential barrier between two adjacent cells. The potential barrier creates an electric charge between the cells and the stored data is maintained even if the power is lost.
Data is read from the M29W256GH70N3E by applying an electric pulse which charges the cell\'s floating gate and causes the cell to either conduct or not to conduct. This determines the value of the stored data. The device also contains an internal data bus which allows data to be written and erased.
The M29W256GH70N3E is a highly reliable and powerful memory device, which is suitable for many different applications. The device is fast and offers the high-performance needed for today\'s demanding applications. It also offers durability, cost-effectiveness and extended life time due to its advanced error correction and wear levelling technologies.
The specific data is subject to PDF, and the above content is for reference
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