M29W640GT70NB6E Allicdata Electronics
Allicdata Part #:

M29W640GT70NB6E-ND

Manufacturer Part#:

M29W640GT70NB6E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 64M PARALLEL 56TSOP
More Detail: FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Paral...
DataSheet: M29W640GT70NB6E datasheetM29W640GT70NB6E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP
Base Part Number: M29W640
Description

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M29W640GT70NB6E is a type of memory device, which is a serial flash memory with 512K bits of data storage. It is equipped with multiple features to meet the needs of embedded system applications. It has 2Mb of storage capacity and is built with a 64-bit wide multiplex bus topology. This memory device is capable of storing both data and code and can be used as a memory element in various electronic devices.

Application Field

M29W640GT70NB6E memory devices are widely used in a range of applications. They are especially useful in the automotive industry, where they can be used in systems such as powertrain control, safety systems and advanced driver assistance systems. This memory device is also suitable for use in consumer devices, such as digital cameras, MP3 players, routers and switches. Moreover, this type of memory device is suitable for use in industrial automation, as well as medical and military applications.

Working Principle

M29W640GT70NB6E memory devices work in a serial manner. The access time for reading data or code is 10ns, and the device operates on a single 2.7V to 3.6V power supply. This memory device is formed by 16 4K x 8 bits banks, and its endurance and data retention capabilities are among the best compared to other serial flash memory devices. Additionally, the M29W640GT70NB6E device enables low power consumption, consuming only 22µA in standby mode.

The M29W640GT70NB6E memory device is based on a multiplex bus architecture, which provides higher performance than traditional memory architectures. This type of memory device provides simultaneous read and write operations, as well as accelerated sector erase functionality. It has multi-level cell (MLC) technology, meaning it can store two bits of data in each cell, increasing the density of data stored. It also features the autoselect feature, allowing the device to automatically select the most appropriate opcode for the job.

The M29W640GT70NB6E memory device is made of silicon, and it has advanced security features, such as a password lock to protect stored data from malicious intents. It also has a wide temperature range, and it can be operated in temperature as low as -40°C and as high as +85°C. Moreover, it is a low-cost memory device, making it a great choice for embedded system applications.

In conclusion, the M29W640GT70NB6E memory device is a low-cost, high-performance serial flash memory device suitable for use in many embedded and industrial applications. It offers features that make it an ideal choice for automotive, consumer, industrial and military applications. The device has two bits per cell and has advanced security features, as well as temperature and humidity tolerance. It is capable of faster access to stored data and code than other memory devices and has a low power consumption in standby mode, making it very energy efficient.

The specific data is subject to PDF, and the above content is for reference

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