M39003/09-0239/HSD Allicdata Electronics
Allicdata Part #:

M39003/09-0239/HSD-ND

Manufacturer Part#:

M39003/09-0239/HSD

Price: $ 12.36
Product Category:

Capacitors

Manufacturer: Vishay Sprague
Short Description: CAP TANT 39UF 10% 20V AXIAL
More Detail: 39µF Hermetically Sealed Tantalum Capacitors 20V A...
DataSheet: M39003/09-0239/HSD datasheetM39003/09-0239/HSD Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
20 +: $ 11.22660
Stock 1000Can Ship Immediately
$ 12.36
Specifications
Series: Military, MIL-PRF-39003/9, CSR21
Packaging: Bulk 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Capacitance: 39µF
Tolerance: ±10%
Voltage - Rated: 20V
Type: Hermetically Sealed
ESR (Equivalent Series Resistance): 120 mOhm
Operating Temperature: -55°C ~ 125°C
Lifetime @ Temp.: --
Mounting Type: Through Hole
Package / Case: Axial
Size / Dimension: 0.289" Dia x 0.686" L (7.34mm x 17.42mm)
Height - Seated (Max): --
Lead Spacing: --
Manufacturer Size Code: C
Features: Military
Failure Rate: R (0.01%)
Description

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Tantalum capacitors are small, typically cylindrical devices which are used for storing an electrical charge. The M39003/09-0239/HSD is a specific type of tantalum capacitors manufactured by the Pacific Aerospace and Tungsten Company. This type of capacitor is designed for use in a wide variety of applications.

The most common use for the M39003/09-0239/HSD is as a reliable, small-sized capacitor for high-density electronic applications. Its small size, low profile, and excellent reliability make this particular type of capacitor highly suited for use in miniaturized, or space-constrained, electronic designs. It is also well-suited to high-rate pulsed applications, which may require constant discharge and re-charging of the capacitor in order to operate as intended.

One of the major advantages of using the M39003/09-0239/HSD is its ability to function at a wide range of temperatures. This type of capacitor is rated between -55 and 125 degrees Celsius, allowing it to be safely used in a variety of environmental an temperature conditions. Additionally, it is also designed to perform well under conditions of high voltage and humidity.

The M39003/09-0239/HSD operates on the principle of electrolyte capacitive leakage. This involves the use of an electrolyte, generally a dissolved and homogenized mixture of water and electrolyte salt, to form a conductive medium between the two capacitor plates. This conductive medium serves to store electrical charge and is separated by a dielectric material, such as a ceramic, film, or tantalum oxide.

The advantage of using electrolyte capacitive leakage in a capacitor, such as the M39003/09-0239/HSD, is its ability to charge quickly while also supporting high current densities. This type of capacitor is specifically designed so that it can charge up to peak capacity quickly and with minimal loss. Additionally, the electrolyte capacitive leakage ensures that the capacitor remains within its rated safety parameters over time, with very low potential for device reset or degradation.

Other advantages of using electrolyte capacitive leakage include improved voltage stability and improved dielectric absorption. The former ensures that the voltage across the capacitor is regulated and remains within its desired limits, while the latter ensures that any unexpected voltage spikes which may appear across the capacitor\'s terminals are quickly absorbed and dissipated without damaging the device.

In summary, the M39003/09-0239/HSD is a high-density, small form-factor tantalum capacitor designed for use in a variety of high-density electronic applications. It utilizes the principles of electrolyte capacitive leakage to ensure that it can charge quickly and with minimal loss, while also offering improved voltage stability and dielectric absorption to ensure a reliable, long-term performance.

The specific data is subject to PDF, and the above content is for reference

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