MAGX-000035-030000 Allicdata Electronics
Allicdata Part #:

1465-1078-ND

Manufacturer Part#:

MAGX-000035-030000

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: M/A-Com Technology Solutions
Short Description: TRANSISTOR GAN 30WCW 0.03-3.5GHZ
More Detail: RF Mosfet HEMT 50V 100mA 1MHz 13.6dB 30W
DataSheet: MAGX-000035-030000 datasheetMAGX-000035-030000 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Transistor Type: HEMT
Frequency: 1MHz
Gain: 13.6dB
Voltage - Test: 50V
Current Rating: 2.5mA
Noise Figure: --
Current - Test: 100mA
Power - Output: 30W
Voltage - Rated: 50V
Package / Case: --
Supplier Device Package: --
Series: --
Packaging: Bulk 
Part Status: Obsolete
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MAGX-000035-030000, also known as the RFPMOS, is a type of field-effect transistor (FET) used in radio frequency (RF) applications. It is a high-performance device and is used in many RF-related systems for a variety of purposes. This article will discuss the application fields and working principles of such a device, so that the reader can gain a better understanding of what it is and how it can be used.

Application Field

The MAGX-000035-030000 is used in a wide range of RF-related systems, from wireless communications to industrial systems. It is suitable for use in high frequency applications, as it can operate up to frequencies of 1GHz. Due to its high power capacity and robust performance, it is often used for high power applications.

Aside from being used in wireless communications, it is also often used in applications such as satellite and cable TV, automotive systems, and point-to-point communications systems. As a result, the MAGX-000035-030000 is a very versatile device, and can be used in a number of different areas.

Working Principle

The MAGX-000035-030000 is a type of FET, which stands for field-effect transistor. In short, it is a type of transistor that uses an electric field to control the current between two electrodes, or "gates". The current is drawn from a source to a drain, depending on the voltage applied between the two gates.

As with all FETs, the MAGX-000035-030000 uses a "gate" to control the flow of current. The gate acts as a type of "switch", allowing current to pass between the source and the drain when the appropriate voltage is applied. When the voltage is removed, the current is prevented from flowing, which is how FETs are able to be used in RF applications to switch off or reduce the power when needed.

The MAGX-000035-030000 is particularly well suited for use in RF applications, as it handles high frequencies very well. This is because of its high maximum frequency limit of 1GHz, which allows it to cope with frequencies much higher than other FETs. It also has a high power capacity, meaning it can handle large amounts of power without becoming damaged.

Conclusion

The MAGX-000035-030000 is a versatile FET device, which is used in a wide range of RF applications. Its high frequency and power capabilities allow it to be used in many applications, from wireless communication to automotive systems. Its high power capacity is particularly useful in high power applications, as it can handle large amounts of power without becoming damaged. We hope this article has helped you gain a better understanding of this device and its capabilities.

The specific data is subject to PDF, and the above content is for reference

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