Allicdata Part #: | MBR1050CTC0G-ND |
Manufacturer Part#: |
MBR1050CT C0G |
Price: | $ 0.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ARRAY SCHOTTKY 50V TO220AB |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 50V 10A... |
DataSheet: | MBR1050CT C0G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.16968 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io) (per Diode): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 50V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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。Diodes-Rectifiers-Arrays are electronic components which are used to either allow or block the flow of electricity. MBR1050CT C0G is a specific type of a Schottky barrier rectifier designed for use in higher-energy automobile and industrial voltage applications. It is optimized for surface mount technology. This diode is usually employed in DC to DC converters as well as LED light strips.
The MBR1050CT C0G features a 1.0A current rating and a 50V blocking voltage, making it well-suited for applications in a variety of industries, including automotive, industrial, and consumer electronics. It has a high temperature plastic package, temperature resistant against an extended range of temperature operating from -55°C to +150°C. It also exhibits very low forward voltage drop and excellent current stability over a wide range of temperature and forward current.
The MBR1050CT C0G’s semiconductor construction consists of a Schottky Barrier metal–semiconductor junction, which is formed by the joining of a heavily doped n+ layer and a metal layer. This junction behaves similarly to a PN-junction with a reduced barrier voltage. The n+ layer is connected to the anode, while the metal layer is connected to the cathode. Due to the low resistance semiconducting properties of the MBR1050CT C0G diode, it has a high forward current gain.
The MBR1050CT C0G has an internal reverse-blocking capability which prevents any current from flowing in the reverse direction. This is accomplished by the large potential difference created by the metal-semiconductor junction due to the high-order doping of the n+ layer, which serves to reduce the potential of the cathode, preventing the flow of any reverse current.
The working principle of the MBR1050CT C0G diode is as follows. When the anode is connected to a positive voltage, the n+ layer and metal layer allow current to flow, forming a forward-biased diode. This permits current to flow in only one direction, from the anode to the cathode. In the reverse direction, regardless of the magnitude of the voltage applied, the metal-semiconductor junction prevents any current from flowing in the reverse direction.
The MBR1050CT C0G diode offers considerable advantages in terms of cost, size, and efficiency over conventional rectifier diodes, making it suitable for many applications. It can be used in a variety of industrial and automotive applications, such as DC power supplies, battery chargers, LED strips, DC-DC converters, motor drivers, and switch mode power supplies, among many others. Moreover, its low forward voltage, low reverse biases and high efficiency makes it ideal for high-current applications in both digital and analog circuits.
The specific data is subject to PDF, and the above content is for reference
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