Allicdata Part #: | MBT35200MT1GOSTR-ND |
Manufacturer Part#: |
MBT35200MT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 35V 2A 6TSOP |
More Detail: | Bipolar (BJT) Transistor PNP 35V 2A 100MHz 625mW S... |
DataSheet: | MBT35200MT1G Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 35V |
Vce Saturation (Max) @ Ib, Ic: | 310mV @ 20mA, 2A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1.5A, 1.5V |
Power - Max: | 625mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 |
Supplier Device Package: | 6-TSOP |
Base Part Number: | MBT35200 |
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MBT35200MT1G Application Field and Working Principle
MBT35200MT1G is a type of transistor which belongs to a category of electrical devices called Bipolar Junction Transistors (BJTs). BJTs are used for amplifying, switching, or otherwise controlling current signals. MBT35200MT1G is a part of the Single Bipolar (BJT) Transistor family, and is specifically designed for use in high-speed applications.
The MBT35200MT1G is built with a PNP substrate and consists of three layers – an emitter, a base and a collector. The substrate works to hold the three layers together and is made with a material known as silicon or Germanium. The materials used give the substrate special properties that allow it to be used in high-speed applications. The PNP substrate also provides an electrical isolation between the emitter, base and collector.
The emitter works to draw current away from the base, while the base works as an amplification region. As an input signal is applied to the emitter, it will draw a current away from the base and, in turn, cause an electrical field. This electrical field will then cause voltage to be generated in the base. The voltage in the base will then be passed on to the collector, which, in turn, will cause a current flow to the collector. This current flow is then amplified, allowing the transistor to act as an amplifier.
MBT35200MT1G transistors have a wide range of applications in industry, such as amplifier circuits, DC motor speed control, logic gates, audio frequency devices and general power-switching applications. The MBT35200MT1G has been designed for operating at high frequencies and its applications include switches, relays, indicators, converters and digital circuits. The devices are built with robust materials, making them resistant to heat and vibration, which makes them great for industrial applications.
Overall, the MBT35200MT1G is an advanced and reliable single bipolar (BJT) transistor which can be used in a variety of different applications. It offers great speed, efficiency and power output, and its rugged construction ensures reliability even in harsh industrial settings. The device also has a wide range of applications due to its high-speed capabilities and its robust construction.
The specific data is subject to PDF, and the above content is for reference
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