MDI145-12A3

Current - Collector Cutoff (Max):	6mA
Base Part Number:	MDI
Supplier Device Package:	Y4-M5
Package / Case:	Y4-M5
Mounting Type:	Chassis Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
NTC Thermistor:	No
Input:	Standard
Input Capacitance (Cies) @ Vce:	6.5nF @ 25V
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 100A
Power - Max:	700W
Current - Collector (Ic) (Max):	160A
Voltage - Collector Emitter Breakdown (Max):	1200V
Configuration:	Single
IGBT Type:	NPT
Part Status:	Active

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MDI145-12A3 is a type of Insulated Gate Bipolar Transistor (IGBT) module, distinguished by its high-temperature performance capability. This type of IGBT module is designed for applications that require extended operational temperature range and offers optimised power performance within specified conditions such as current, voltage and frequency. An IGBT is essentially a mixture of two components - a MOSFET and a bipolar transistor. It is essentially a voltage controlled switch and has a greater current carrying capability than a standard MOSFET. Leveraging the important characteristics of MOSFETs and bipolar transistors, the IGBT combines high frequency capabilities of a MOSFET with a low gate drive power of a bipolar transistor. The device offers high switching performance as well as fast switching frequency and low losses. Therefore, IGBTs are suitable for many applications such as commercial power devices, three-phase motor-control drives, HV motor drives and inverters, industrial digital-power converters and railway transportation systems.The MDI145-12A3 is a high power IGBT module that can help improve the efficiency of power supply circuits. It contains a polarity constant, heat resist semiconductor chip, integrated gate drive circuits and ventilation fins. It is designed to provide reliable switching performance over a wide temperature range. Furthermore, this device offers low capacitance, fast switching frequency and low gate drive power. The device is capable of supporting repetitive switching under high-temperature conditions up to 175°C.The MDI145-12A3 has an IGBT chip featuring improved sections for high current, peak voltages up to 1700V and blocking voltages up to 1200V. It has a static on-state resistance of 2.3mΩ and a static up-state sample inductance of 600nH, which helps reduce switching loss. The MDI145-12A3 also offers low junction capacitance, high power handling capability, electrical noise reduction and low output inductance. Furthermore, it is designed with an integrated heat dissipation system that helps reduce heat build-up and optimises power performance.Overall, the MDI145-12A3 IGBT module is suitable for a wide range of applications that require high-temperature performance capability. It offers improved sections, lower junction capacitance and static resistance, along with high current handling capability. This device is capable of fast switching frequency, low gate drive power and low voltage noise. Additionally, it contains integrated gate drive circuits and heat dissipating fins which help ensure proper cooling and improved power efficiency.

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