| Allicdata Part #: | F6494-ND |
| Manufacturer Part#: |
MG1250S-BA1MM |
| Price: | $ 40.03 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Littelfuse Inc. |
| Short Description: | IGBT 1200V 80A 500W PKG S |
| More Detail: | IGBT Module Half Bridge 1200V 80A 500W Chassis Mo... |
| DataSheet: |  MG1250S-BA1MM Datasheet/PDF |
| Quantity: | 135 |
| 1 +: | $ 36.38250 |
| 10 +: | $ 34.24180 |
| 25 +: | $ 32.10180 |
| 100 +: | $ 30.60360 |
Specifications
| Series: | -- |
| Part Status: | Active |
| IGBT Type: | -- |
| Configuration: | Half Bridge |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| Current - Collector (Ic) (Max): | 80A |
| Power - Max: | 500W |
| Vce(on) (Max) @ Vge, Ic: | 1.8V @ 15V, 50A (Typ) |
| Current - Collector Cutoff (Max): | 500µA |
| Input Capacitance (Cies) @ Vce: | 4.29nF @ 25V |
| Input: | Standard |
| NTC Thermistor: | No |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | S-3 Module |
| Supplier Device Package: | S3 |
Description
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MG1250S-BA1MM is a kind of digital power module integrated with two high-speed insulated-gate bipolar transistors (IGBTs) and two diodes. It is a cost-effective and convenient digital power module for power devices in a range of industrial applications. This article focuses on the application field and working principle of the MG1250S-BA1MM.In general, this module can be used in power switching applications such as inverters, motor drives, welding equipment, and induction heating equipment.MG1250S-BA1MM’s built-in power MOSFETs and diodes are well decoupled, making it ideal for applications like in DC-DC converters, welding, and Uninterrupted Power Supply (UPS).The MG1250S-BA1MM uses IGBTs as its core components, which are power MOS transistor with bipolar design. They are capable of controlling high voltage and high frequencies with excellent switching characteristics, ensuring quick on-off times and low switching losses in applications. This power module also contains two integrated Schottky diodes that function as anti-parallel with the IGBTs. Apart from this, the diode connection can also be used to bypass voltage in the power supply device.The IGBTs used in the MG1250S-BA1MM have a high current capacity of 1000 Amps at 400 V, as well as improved efficiency over other semiconductor switches. The chip design also contains anti-parallel diodes that help reduce on-state impedance and increase efficiency for both applications. In addition, this module also features open-emitter protection and UVLO, undervoltage lockout, status feedback, and an integrated charge pump structure.The working principle of MG1250S-BA1MM is to control the voltage applied directly to the chip by sending current to the gate terminal. When the IGBT is turned on, the gate voltage increases, releasing electrons from the gate dielectric and allowing current to flow from the source to the drain. When the IGBT is turned off, the gate voltage drops, trapping electrons in the gate dielectric, creating a reverse current path that stops the current flow.The MG1250S-BA1MM is an ideal power module for high voltage and high current switch control applications such as motor drives, inverters, welding systems, and induction heating equipment. Its combination of high-speed IGBTs and integrated Schottky diodes provide excellent switching characteristics and low switching losses. This power module is also capable of controlling high voltage and high frequency with its built-in power MOSFETs and diodes, while its added open-emitter protection, UVLO, undervoltage lockout, status feedback and charge pump structure allow for safer and more reliable operation.
The specific data is subject to PDF, and the above content is for reference
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