MMBF4393LT1G Allicdata Electronics

MMBF4393LT1G Discrete Semiconductor Products

Allicdata Part #:

MMBF4393LT1GOSTR-ND

Manufacturer Part#:

MMBF4393LT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 30V 0.225W SOT23
More Detail: JFET N-Channel 30V 225mW Surface Mount SOT-23-3 (...
DataSheet: MMBF4393LT1G datasheetMMBF4393LT1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V
Resistance - RDS(On): 100 Ohms
Power - Max: 225mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MBF4393
Description

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MMBF4393LT1G is a JFET transistor device built with a dual enhancement JFET technology, aimed at improving the reliability and performance of digital and analog signal processing applications. It has a gate reverse bias range and a high current gate bandwidth. Its features include a low gate-source capacitance of less than 0.3pF, and a low input capacitance of 0.3pF, with a low drain-source capacitance of 2.2pF.

The MMBF4393LT1G is used in a wide range of applications, and its usage covers signal alternation and transconductance modes. It has a wide range of applications for power conversion, active filters and communication interface circuits. It is also suitable for use in situations with interference from nearby RF and EMI signals, as the device is designed to be immune from such interference.

The working principle of the MMBF4393LT1G is based on the electric field effect. When a voltage bias is applied, electric fields are generated that can control the current between the source and drain. This is known as electric field effect, and it governs the flow of current in this type of transistor. The other working principle of the MMBF4393LT1G is transconductance, where a current is applied to the gate, controlling the current flowing between the source and the drain.

The MMBF4393LT1G is able to provide high performance due to its dual enhancement technology, with very low on-resistance, low capacitance and high transconductance. It is able to achieve high switching rates and the device has a high input impedance, allowing it to handle high frequencies with ease. It also has low leakage current and low input bias current, making it suitable for many different applications.

Applications for the MMBF4393LT1G include analog signal processing, as well as power supply switching, power MOSFET drivers and motor control circuits. It is also widely used in RF communications, low power amplifiers, optical switches and audio amplifiers. This device is also found in applications such as high-voltage current source control, digital filter circuits, switched and current-mode power supplies, and data acquisition and processing circuits.

The MMBF4393LT1G is a high performance and reliable JFET transistor device designed for use in many different applications. It is able to provide high performance and reliable operation due to its dual enhancement technology, with very low on-resistance, low capacitance and high transconductance. It also has a high input impedance and low leakage current, making it suitable for many different applications.

The specific data is subject to PDF, and the above content is for reference

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