MMBT2907ALT1G Allicdata Electronics
Allicdata Part #:

MMBT2907ALT1GOSTR-ND

Manufacturer Part#:

MMBT2907ALT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 60V 0.6A SOT23
More Detail: Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 300m...
DataSheet: MMBT2907ALT1G datasheetMMBT2907ALT1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 300mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBT2907A
Description

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MMBT2907ALT1G application field and working principle

MMBT2907ALT1G is categorized under transistors - bipolar (BJT) - single. A bipolar transistor is made of two semiconductors, usually n-type and p-type, joined together. It has a three-terminal construction, namely emitter, collector and base, and is used as an amplifier and switching device.

The MMBT2907ALT1G transistor is an NPN silicon, 150mA General-Purpose Amplifier that features a wide range of programmable characteristics, making it suitable for a variety of applications including switching, logic and amplifier in the industrial and consumer electronics markets. This transistor has a maximum voltage rating of 30V, a maximum DC collector current rating of 150mA, and a maximum operating frequency of 100MHz.

The MMBT2907ALT1G is manufactured using an advanced BiCMOS process, which gives the device excellent high frequency characteristics, making it suitable for use in high-speed applications. The chip contains ESD protection structures, which provide the user with protection from electrostatic discharge damage.

Working Principle

The working principle of a bipolar transistor is based on the balance of two currents, the emitter current and the collector current. When a voltage is applied to the base-emitter junction, the emitter current will flow and create a voltage drop across the emitter-collector junction. This voltage causes the collector current to flow, which is the signal being amplified.

In the case of the MMBT2907ALT1G transistor, the application of a signal to the base-emitter junction will cause an amplified output from the collector-emitter junction. The gain and bandwidth of the device are dependent on the voltage applied and the characteristics of the load connected to the collector. The gain of the transistor can be adjusted by changing the value of the load.

Applications

The MMBT2907ALT1G is a versatile device that can be used for a wide range of applications. It can be used as a switch for controlling the flow of current in a circuit, as an amplifier for boosting signals, or as a logic device. It can also be used in digital circuit designs as an inverter, or as a voltage regulator.

In addition, the device can be used in power supply and battery management circuits, such as in automotive applications where the MMBT2907ALT1 can be used to monitor and regulate the charging of lead acid batteries. It can also be used in power converters, voltage regulators, and power amplifiers.

The MMBT2907ALT1G is also suitable for use in a variety of consumer electronics products, such as amplifiers and audio systems, as well as in television sets and other entertainment systems.

Conclusion

The MMBT2907ALT1G is a versatile, high-performance transistor that can be used for a variety of applications in the industrial and consumer electronics markets. The device has excellent high-frequency characteristics which makes it suitable for use in high-speed applications. In addition, the device has ESD protection structures which provide the user with protection from electrostatic discharge damage.

This device is a simple and reliable electronic component that can be used in many applications, from simple logic circuits to complex audio systems, making it a valuable addition to any electronics laboratory.

The specific data is subject to PDF, and the above content is for reference

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