MMBT4403LT1G Allicdata Electronics

MMBT4403LT1G Discrete Semiconductor Products

Allicdata Part #:

MMBT4403LT1GOSTR-ND

Manufacturer Part#:

MMBT4403LT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 40V 0.6A SOT23
More Detail: Bipolar (BJT) Transistor PNP 40V 600mA 200MHz 300m...
DataSheet: MMBT4403LT1G datasheetMMBT4403LT1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 300mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBT4403
Description

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The MMBT4403LT1G is a NPN epitaxial silicon planar transistor designed for general purpose amplifier, switching and low-noise applications. This single-stage, medium-speed switching transistor comes in a SOT-23 surface-mount package, which is designed to be surface-mounted directly onto the printed circuit boards.

The transistor has a wide variety of potential applications, including amplifiers or switches for low power consumption, low-noise applications, low-gain switches for audio signals, RF amplifiers for reception of low frequencies, amplifying low-level signals in audio amplifiers, low-cycle switching in automatic motor control circuits, and many other general-purpose application areas. It can also be used in power supply circuits, current switching, remote control receivers, low-power watt meters, and low noise microwave amplifiers.

The main feature of this device is its low voltage and current capacity. The transistor operates in the range of 0.2 to 16 volts and has a maximum power rating of 1 watt. The current capability of the device is between 0.2 to 20 milliamps. It is said to be able to deliver up to 250 mW of output power with less than 0.5 dB of distortion. The device also has an On-Time of 0.5 µs, making it suitable for low-power switching and high-impedance applications.

The electrical working principle behind the MMBT4403LT1G is the same as with other transistors. It consists of three terminals called the emitter, collector, and the base. The emitter and the collector are both connected to different levels of electric potential, where the base serves as the control terminal for the flow of current between the two. This current flow is regulated by the voltage applied to the base terminal. When the voltage is high enough, the current is allowed to flow from the collector to the emitter. This, in turn, affects the overall state of the transistor.

For those who are looking for high power transistors for use in higher power applications, this is not the device for them. It is ideal, however, for applications requiring strong output and low power consumption. Its wide range of uses and durable design makes it one of the most popular transistors around.

The specific data is subject to PDF, and the above content is for reference

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