| Allicdata Part #: | MMBTA42LT1GOSTR-ND |
| Manufacturer Part#: |
MMBTA42LT1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 300V 0.5A SOT23 |
| More Detail: | Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 225m... |
| DataSheet: |  MMBTA42LT1G Datasheet/PDF |
| Quantity: | 21000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 500mA |
| Voltage - Collector Emitter Breakdown (Max): | 300V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 30mA, 10V |
| Power - Max: | 225mW |
| Frequency - Transition: | 50MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Base Part Number: | MMBTA42 |
Description
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Introduction
The MMBTA42LT1G, also known as the single bipolar junction transistor (BJT) is a type of transistor device which utilizes a single PN junction in order to regulate the current levels which can flow through it. The MMBTA42LT1G is primarily employed in wireless and/or digital communication circuits, in order to help create a suitable electrical signal.Structure and Working Principle of MMBTA42LT1G
The MMBTA42LT1G transistor is composed of three different components, the base, the emitter and the collector. The base is the potential input into the transistor, which when sufficiently stimulated, generates a current level between the emitter and the collector, subsequently influencing the current output.The PN junction of the MMBTA42LT1G works by amplifying the small current which is emitted from the base, this allows for a much larger current to be produced. This amplifying action is enabled due to the collective properties of the junction parameters, namely the diffusion, drift, and geometrical components.The current flow which is produced by the transistor’s PN junction is based upon the current control which is designed inside the transistor, this works by designating an electrical potential across the transistor, allowing it to be active at those levels, yielding a larger current output.Application of MMBTA42LT1G
The MMBTA42LT1G is commonly used in digital and wireless type systems, such as digital switches and other applications which require a stronger electrical current response. This transistor’s single PN junction allows for a large current flow to exist, where there would be a lack of current if a standard PN junction had been employed.Furthermore, this single PN junction transistor also works well in portable devices which require higher current flow due to their small size requirements. This is because the increased current regulation will allow those devices to remain active without running into too many issues with power regulation.Conclusion
The MMBTA42LT1G is a single bipolar junction transistor (BJT) which utilizes a single PN junction for regulating current levels. This type of transistor is mainly used in wireless and digital communication circuits, as its PN junction allows for a large amount of current flow to pass through it, enabling better communication with digital devices. This transistor also works well in small portable devices, as its PN junction allows for efficient power regulation.The specific data is subject to PDF, and the above content is for reference
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