MMDT3904-7-F Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 NPN (Dual)
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 1V
Power - Max:	200mW
Frequency - Transition:	300MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SOT-363
Base Part Number:	MMDT3904

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Application field and working principle of MMDT3904-7-FMMDT3904-7-F is an array of four NPN silicon bipolar transistors, which can be used in a variety of applications. This transistor array is ideal for use in power amplifier circuits and offers good linearity and low output distortion.The MMDT3904-7-F is a reliable and cost-effective solution for any application requiring multiple transistors. It is commonly used in low-voltage power amplifier circuits, mixer and oscillator circuits, and other circuits requiring multiple transistors.The MMDT3904-7-F is available in a DIP, SOP, and SOIC packages. The DIP package can be used for surface mounting, if desired.The MMDT3904-7-F is designed to operate over a temperature range of 0°C to +125°C, with a maximum junction temperature of +150°C. It also has an approximately 15kHz transition frequency and a maximum gain of at least 140dB.The working principle of this device is simple. It will convert an input voltage into an output current. The current is then sent to the load, which is generally a loudspeaker, an amplifier or a power supply. The input voltage is determined by the operating voltage of the device, the bias current of the transistor, the current gain of the transistor, the gate capacitance, and the base capacitance.The current gain of the device is determined by the input current. This can be adjusted by setting the base bias, which is determined by the circuit design. The gate voltage and the input current are also adjustable, allowing for more accurate tuning of the gain.The MMDT3904-7-F also features low power dissipation, making it suitable for applications requiring low power consumption. Additionally, this device offers high speed operation, making it suitable for high efficiency applications.In conclusion, the MMDT3904-7-F is an array of four NPN silicon bipolar transistors, which is ideal for power amplifier circuits, mixer and oscillator circuits, and other circuits requiring multiple transistors. It is available in a variety of packages and offers good linearity, low output distortion, low power consumption and high speed operation.

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