MMG3015NT1 RF/IF and RFID |
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Allicdata Part #: | MMG3015NT1TR-ND |
Manufacturer Part#: |
MMG3015NT1 |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS HBP 20.5DBM 15DB SOT-89 |
More Detail: | RF Amplifier IC Cellular, PCS, PHS, WLL 0Hz ~ 6GHz... |
DataSheet: | MMG3015NT1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Frequency: | 0Hz ~ 6GHz |
P1dB: | 20.5dBm |
Gain: | 15.5dB |
Noise Figure: | 5.6dB |
RF Type: | Cellular, PCS, PHS, WLL |
Voltage - Supply: | 5V |
Current - Supply: | 95mA |
Test Frequency: | 900MHz |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-4 |
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RF Amplifiers
An RF amplifier converts a low-power RF input signal to a higher power output signal. The input signal usually comes from a receiver or other communications device, while the output signals are usually used to drive a transmitter. An RF amplifier typically consists of one or more gallium arsenide or silicon MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). These devices can be used to amplify frequencies from 1 MHz to 10 GHz over a wide range of power levels.
MMG3015NT1 Application Field and Working Principle
The MMG3015NT1 is a high-frequency silicon-based MOSFET amplifier from Mitsubishi Electric. The device is capable of amplifying signals up to 10 GHz and can be used in radio communication, satellite communication, radar systems and wireless equipment. The device is also designed for application in high-temperature environments, making it an ideal choice for military and aerospace applications.
The MMG3015NT1 is based on a self-biased cascode structure, which is a type of linear amplifier with high linearity and gain. This helps to minimise distortion and improve the overall performance of the device. The device utilises a high-frequency N-channel enhancement-mode MOSFET, as well as a low-frequency depletion-mode MOSFET for operation. The self-biased cascode structure helps to reduce the need for external bias components, reducing component cost and improving signal fidelity.
The device also incorporates ESD (ElectroStatic Discharge) protection for improved safety. The device also utilises advanced power management capabilities, allowing it to remain operational in applications where power consumption needs to be kept to a minimum. The power management features can also be used to maximise efficiency in systems where power consumption needs to be kept to a maximum.
The MMG3015NT1 can be used in a variety of radio communication applications, including mobile radio, base stations, telemetry systems and satellite terminals. The device is capable of providing high gain and low noise performance, which are essential features for successful operation in demanding RF applications. The device can also be used for general purpose RF amplification, where maximum gain and maximum dynamic range must be achieved. The high linearity and low saturation of the device make it an ideal choice for linear amplifiers, such as VCO amplifiers and IF amplifiers.
The MMG3015NT1 is a versatile and reliable RF amplifier that is suitable for operation in both commercial and military applications. The device is easy to use and provides excellent performance for a wide range of RF applications. The device’s high linearity and high gain make it an ideal choice for mobile radio, base station, telemetry and satellite applications.
The specific data is subject to PDF, and the above content is for reference
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