MMRF1304NR1 Discrete Semiconductor Products

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The MMRF1304NR1 (also known as MRF1304NR1) is a depletion-mode, class-F power transistor designed specifically to operate in RF power applications. As a depletion-mode transistor, it is generally operated by applying a negative bias to the Gate in order to turn the device on. This power transistor can be used in a wide range of applications, including RF amplification, linear and class-F power amplifiers, and other power conversion circuits. In this article, we will discuss the MMRF1304NR1\'s application field and its working principle.

MMRF1304NR1 Features

The MMRF1304NR1 is a dual-gated depletion-mode power transistor that has been specifically designed for RF applications. It features a Monolithic Microwave Integrated Circuit (MMIC) design with an integrated high-Q GaAs field-effect transistor for maximum efficiency. The MMRF1304NR1 is a low-cost alternative to other higher-cost RF transistors, and it offers high RF output power, good linearity, and low harmonic distortion. It also features a high-voltage field effect gate designed specifically for RF operation, as well as a self-biased gate driver.

The MMRF1304NR1 is a 30 watt device capable of operating up to 1GHz (100 to 200MHz is available as an option), with a maximum drain voltage of 33V and a maximum gate voltage of 15V. This power transistor has a power gain of 12 dB @ 1GHz, a frequency response of 25 MHz to 1GHz (gain flatness of ± 2dB maximum over the full frequency range), and a maximum power output of 30 Watts. It also features a drain supply current of 16.0A @ 3 volts and a maximum thermal resistance of 5.5 degrees Celsius per watt.

MMRF1304NR1 Application Field

The MMRF1304NR1 is a versatile power transistor that can be used in a variety of circuits, including RF amplifiers, linear power amplifiers, class-F amplifiers, and other power conversion circuits. It is particularly well-suited to applications that require high power output over a wide frequency range. Examples include mobile applications such as cellular base station amplifiers, as well as RF broadcast amplifiers used in radio and television broadcasting systems.

The MMRF1304NR1 can also be used in high-power, linear amplifiers operating at extremely high frequencies. This includes communication systems such as satellite communications and point-to-point radio links. Additionally, this power transistor can also be used in other power conversion circuits and as a power driver for LEDs, actuators, and other such devices.

MMRF1304NR1 Working Principle

The MMRF1304NR1 operates on a Depletion Mode principle. This means that a negative Gate bias is typically applied in order to increase the conductivity between the Drain and Source. This negative bias affects the depletion region, reducing the ability of the Gate to control the flow of electrons between Source and Drain. In turn, this means that the device is turned on and can pass current with a varying degree of amplification.

The MMRF1304NR1 can be operated as an RF power amplifier or as a linear amplifier. In linear operation, the Drain current is modulated by an input signal and the amplified output is proportional to the input, allowing for the device to be used for amplification of signals for communication systems. In the RF power amplifier operation, a Class-F or Class-E amplification scheme is utilized, wherein the RF signal is amplified by pulse-width modulation and significant amounts of power can be generated.

Conclusion

The MMRF1304NR1 is a versatile, depletion-mode power transistor that can be used in a wide range of applications, including RF amplifiers, linear amplifiers, and other power conversion circuits. With its high RF output power and reasonable cost, the MMRF1304NR1 can be a great addition to many circuits. Furthermore, its operation principle is well-understood, making the device both easy to use and reliable.

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