MMSTA42-TP Allicdata Electronics
Allicdata Part #:

MMSTA42TPMSTR-ND

Manufacturer Part#:

MMSTA42-TP

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: TRANS NPN 300V 0.2A SOT323
More Detail: Bipolar (BJT) Transistor NPN 300V 200mA 50MHz 200m...
DataSheet: MMSTA42-TP datasheetMMSTA42-TP Datasheet/PDF
Quantity: 42000
3000 +: $ 0.03043
6000 +: $ 0.02646
15000 +: $ 0.02249
30000 +: $ 0.02117
75000 +: $ 0.01985
150000 +: $ 0.01764
Stock 42000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 200mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: MMSTA42
Description

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The MMSTA42-TP is a single Bipolar Junction Transistor (BJT) designed for applications such as high voltage, high power and high speed switching as well as circuit design. It is a NPN (Negative Positive Negative) transistor with a maximum collector-emitter voltage of 40 V and a maximum collector current of 3.2 A. The MMSTA42-TP is also suitable for use in low-noise amplifiers, low frequency oscillators, digital logic circuits and high frequency skidance amplifiers.

A bipolar junction transistor consists of three p-n junctions. It is made up of three layers: the emitter which is the negatively charged layer, the base which acts as a control terminal and the collector which is the positively charged layer. The current flows from emitter to base to collector and the transistor functions as an amplifier, allowing the reinforced current to pass in the collector during forward biased operation.

The MMSTA42-TP has anftsmanshipedance between the base to emitter and base to collector junction of 5 Ω and 4 Ω respectively. The switching speed of the transistor is 100 mA/µs which is fast enough for most applications. It also has a high collector-emitter saturation voltage of 0.9 V and a low leakage current.

The MMSTA42-TP is manufactured in an inexpensive alloy package for superior electrical and thermal performance. This package is hermetically sealed to ensure stability in applications where the environment is hostile such as high temperature, humidity, airborne contaminants or vibration. It is also available in various ratings with voltage and current ratings ranging from 30 V to 800 V and 3.2 A to 10 A.

The MMSTA42-TP has numerous applications. The most common application is in power supplies, where the MMSTA42-TP provides high-speed switching and low RDS(on). It is also used in DC current sensing,dc-dc convectors, and circuit breaker circuits. Finally, it can be used in motor control, dc motor speed control and UPS systems.

In conclusion, the MMSTA42-TP is a versatile, high-performance single bipolar junction transistor designed for high voltage, high power and high speed switching applications. With its low junction capacitance, low leakage current, high speed switching and high current handling capability, the MMSTA42-TP is an excellent choice for most circuit designs.

The specific data is subject to PDF, and the above content is for reference

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