Allicdata Part #: | MMUN2111LT3GOSTR-ND |
Manufacturer Part#: |
MMUN2111LT3G |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 246MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | MMUN2111LT3G Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
10000 +: | $ 0.01098 |
30000 +: | $ 0.00988 |
50000 +: | $ 0.00878 |
100000 +: | $ 0.00823 |
250000 +: | $ 0.00732 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 246mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMUN21**L |
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The MMUN2111LT3G is a type of pre-biased single bipolar junction transistor (BJT), which is used for amplification and switching applications. This versatile general-purpose transistor is an economical alternative for a wide range of analog and digital applications. The pre-biased transistor offers high input impedance and possess the ability to handle high-voltage signals up to 150V, making it an ideal choice for power supply, audio and RF applications.
The MMUN2111LT3G pre-biased BJT is made up of three terminals: the emitter, collector, and base terminals. The transistor works as a current-controlled current source; when a voltage is applied to the base terminal, the current flow to the collector terminal is controlled by the current flowing through the emitter terminal.
In its most common configuration, the MMUN2111LT3G is employed as a switch, with the emitter and base terminals connected to ground and the collector terminal connected to a high voltage source. When current is applied to the base terminal, the transistor opens a channel, allowing current flow from the collector to the emitter terminal. The current flowing through the base terminal controls the flow of current from collector to emitter, thus allowing the transistor to be used as a variable resistor or switch.
The MMUN2111LT3G is also used as an amplifier; it works by increasing the level of current at the collector terminal with respect to the base terminal. When a positive voltage is applied to the base terminal, current flows from the collector to the emitter terminal, with the current gain determined by the resistor ratio of the emitter and collector terminals. This allows the transistor to amplify AC signals as well as DC signals.
The pre-biased single bipolar junction transistor is also used in digital applications. Due to its ability to handle high-voltage signals, the MMUN2111LT3G can be used to control the voltage of digital circuits. Its pre-biased nature also allows it to be used as a voltage-to-current converter in digital signal processing circuits. By manipulating the base terminal, the emitter-collector current can be increased or decreased, thereby allowing the transistor to be used as a logic gate for logic functions such as OR, AND, NAND, and NOR.
Overall, the pre-biased single bipolar junction transistor offers a low-cost and highly versatile solution for a wide range of applications. It has the ability to amplify and switch both AC and DC signals, and can be used to control the voltage of digital circuits. Additionally, its ability to handle high-voltage signals makes it an ideal choice for a variety of power supply, audio, and RF applications.
The specific data is subject to PDF, and the above content is for reference
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