Allicdata Part #: | MMUN2112LT1-ND |
Manufacturer Part#: |
MMUN2112LT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 246MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | MMUN2112LT1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 246mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMUN21**L |
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MMUN2112LT1 is a single, pre-biased bipolar junction transistor, or BJT, that has many applications in today\'s modern day electronics. This device is highly energy-efficient, and features a low-on resistance along with a high-speed switching capability.
The principle of operation for MMUN2112LT1 is relatively straightforward. This device contains two diodes connected back-to-back and a base wire between them. When a sufficiently high voltage is applied to the base of the transistor, the two diodes conduct electricity, allowing current to flow through the device. This is also known as “forward biasing” the transistor. The current through the device is then controlled by the voltage on the base wire.
This device has many advantages over other types of transistors. Most notably, it has a very low-on resistance, which is particularly beneficial in applications where power savings is important. Additionally, the speed of switching is extremely high. This allows it to be used in a variety of situations that require fast response times.
Due to its low-on resistance and high-speed switching capabilities, MMUN2112LT1 has a wide range of useful applications. For example, it can be used as a power switch for low-power electronics, or as a logic gate in digital circuits. It is also used in automotive electronics and can be found in various types of sensors, such as the ones used in safety systems and engine control modules.
In addition to its common applications, MMUN2112LT1 can also be used as a switch for other devices, such as relays. This is particularly useful in applications that require a large amount of power to be switched, such as those found in industrial settings. Additionally, this device is also used in analog circuits, where it can be used to simulate transistors, such as FETs and MOSFETs.
In summary, the MMUN2112LT1 is a single, pre-biased bipolar junction transistor that has many advantages over other types of transistors. It is highly energy-efficient and has a low-on resistance along with a high-speed switching capability, making it useful in a variety of applications, including automotive, industrial, and digital circuitry. Its easy operation and wide range of applications make it a popular choice for engineers looking for an effective and efficient solution.
The specific data is subject to PDF, and the above content is for reference
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