MMUN2211LT1 Allicdata Electronics
Allicdata Part #:

MMUN2211LT1OSCT-ND

Manufacturer Part#:

MMUN2211LT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 246MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: MMUN2211LT1 datasheetMMUN2211LT1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 246mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMUN22**L
Description

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The MMUN2211LT1 is a single, pre-biased, bipolar junction transistor (BJT). It is designed as a highly integrated switch for applications in automotive, automotive illumination, consumer, and industrial lighting. The versatile features of this device make it ideal for a wide range of applications, including consumer audio and video equipment, automotive electronics, HVAC and lighting, and military and aerospace applications.

The MMUN2211LT1 is a NPN transistor with a built-in Zener diode for reliable bias current control. The Zener diode is connected between the base and collector and is encapsulated within the transistor die. This provides a stable bias current for the transistor, even when the collector current changes. This makes it suitable for a variety of applications, such as switching speed dependent loads.

The MMUN2211LT1 has maximum collector-emitter voltage of 1.9V and collector-base voltage of 2.7V. It also has a maximum collector current of 30mA and a collector-emitter saturation voltage of 0.2V. The on-resistance of the device is typically 0.8Ω. The MMUN2211LT1 is available in a surface-mount package, with pin assignments of Emitter, Base and Collector respectively.

The working principle of the MMUN2211LT1 is the same as that of any other bipolar junction transistor. When an electrical signal is applied to the Base of the transistor, it causes a positive or negative current to flow through the Emitter-Base junction. This current causes a larger current to flow from the Collector to the Emitter and the transistor is said to be "on". The voltage level at the Base that is needed to turn the transistor on is called the "turn-on voltage".

When the Base-Emitter voltage is low or near zero, the Collector-Emitter voltage is also near zero, and the transistor is said to be in "cut-off". In this mode, no current flows through the transistor, so it acts like an "open-circuit".

The Zener diode built into the MMUN2211LT1 helps provide a regulated bias current that allows the transistor to switch cleanly without disturbing other transistors in the circuit. The Zener diode also helps the transistor turn on and off reliably, especially at higher frequencies, making the MMUN2211LT1 an ideal choice for many types of applications.

The MMUN2211LT1 is an excellent choice for applications requiring a transistor with a low power consumption. Its low power consumption, combined with its high speed and high current handling capabilities, makes it an ideal switch for a wide range of applications. Additionally, its small surface mount package makes it easy to integrate into any system.

The MMUN2211LT1 is a reliable, low-cost alternative for applications requiring precise switching. With its built-in Zener diode, it provides reliable current control and a clean switching operation. Its integrated signal-handling capabilities and low on-resistance make it a great choice for any application.

The specific data is subject to PDF, and the above content is for reference

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