MMUN2215LT1G Discrete Semiconductor Products |
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Allicdata Part #: | MMUN2215LT1GOSTR-ND |
Manufacturer Part#: |
MMUN2215LT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 0.4W SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | MMUN2215LT1G Datasheet/PDF |
Quantity: | 6000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 400mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMUN22**L |
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The MMUN2215LT1G is a single, pre-biased, bipolar junction transistor (BJT). It is designed and manufactured by Fairchild Semiconductor, and can be used in a wide variety of applications and industries. Some of these applications include general purpose amplification, linear audio and power supplies, motor control, and switching power supplies.
The MMUN2215LT1G is a medium current general purpose transistor which consists of of a three-terminal NPN device. It is packaged in a standard small outline plastic package, with a pin count of three. It has a collector-emitter voltage of 60V, an emitter-base voltage of 5V, and a collector-base voltage of 70V. It also has a collector current of 1A, a peak collector current of 2A, and a Pout rating of 5W.
The working principle of the MMUN2215LT1G is simple and straightforward. When a voltage is applied to the base terminal, the transistor turns on. This causes a current to flow from the collector to the emitter. The amount of current that flows is determined by the voltage on the base, as well as the saturation voltage of the base-emitter junction in the transistor. As the voltage on the base increases, the saturation voltage also increases, which in turn increases the amount of current that flows from the collector to the emitter.
In addition to its simple working principle, the MMUN2215LT1G also has a few other features that make it an attractive choice for a variety of applications. The transistor has been pre-biased at the factory, meaning it can be used without having to pre-bias it yourself. This feature greatly reduces the time and cost to design and manufacture the finished product. The transistor also has a high-frequency operation capability, meaning it can handle fast switching and very high-speed switch control. It also has a low operating temperature range, making it suitable for temperature-sensitive applications.
The MMUN2215LT1G is an excellent choice for a variety of applications due to its simple working principle and excellent features. It is easy to use and can handle a wide range of operating conditions. Its pre-biased design makes it easy to integrate into existing circuits, and its low operating temperature range makes it suitable for temperature-sensitive applications. With its high-frequency operation capability, it can handle very high-speed switch control. It is a great choice for those looking for a versatile and reliable transistor.
The specific data is subject to PDF, and the above content is for reference
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MMUN2234LT1G | ON Semicondu... | 0.01 $ | 45000 | TRANS PREBIAS NPN 0.246W ... |
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MMUN2138LT1G | ON Semicondu... | 0.02 $ | 15000 | TRANS PREBIAS PNP 246MW S... |
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MMUN2213LT1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PREBIAS NPN 246MW S... |
MMUN2216LT1 | ON Semicondu... | -- | 1000 | TRANS PREBIAS NPN 246MW S... |
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