MPSA28_D27Z

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	800mA
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	10000 @ 100mA, 5V
Power - Max:	625mW
Frequency - Transition:	125MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	MPSA28

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MPSA28_D27Z Application Field and Working Principle

Introduction

MPSA28_D27Z is a single bipolar junction transistor (BJT) manufactured by Semelab Ltd. It is a PNP general purpose transistor which is suitable for a wide range of applications. Its collector-emitter breakdown voltage (BVceo) is rated at 28V, and its collector to emitter saturation voltage (Vce(sat)) is 0.5V at 250mA. MPSA28_D27Z can be used as either an amplifier or a switch. It has a low collector-emitter saturation voltage and is able to operate at high current ratings.

Applications

MPSA28_D27Z transistors are designed for use in a wide variety of applications. They can be used as low power amplifiers, switches and signal processors. Their low voltage and power ratings make them suitable for use in consumer electronics such as radios, TVs, portable audio players and other battery-operated applications. They are also useful for signal conditioning and amplification applications.

Constructions and Features

MPSA28_D27Z transistor is a three-pin device packaged in a TO-92 package. It consists of a PNP epitaxial silicon base layer and a silicon collector. The Base-Emitter junction is connected to a gold-plated lead frame contact, while the Collector and Emitter contacts are connected to gold-plated Aligned lead frames. MPSA28_D27Z features a maximum collector-emitter voltage rating of 28V, and a maximum collector current of 250mA. It has a maximum power dissipation of 500 mW and a maximum operating junction temperature of 150°C.

Working Principle

The MPSA28_D27Z is a PNP transistor, which means that its Base terminal current must be positive in order for it to conduct current. When the Base terminal is positively biased with respect to the Emitter, current flows from the Emitter to the Base. This results in a voltage drop across the base-emitter junction, which forward-biases the junction, allowing current to flow from the Collector to the Emitter. In this state, the transistor is said to be “on”.When the Base voltage is negative with respect to the Emitter, the Base-Emitter junction is reverse-biased, and current is not allowed to flow. This is known as the “off” state of the transistor. The speed at which the transistor can switch between the “on” and “off” state is known as its switching speed. The switching speed of MPSA28_D27Z is relatively fast, making it suitable for use in high-speed applications requiring a low response time.

Advantages

MPSA28_D27Z transistor provides numerous benefits to its users. These include a low power dissipation rating, a low voltage rating, a high current rating, and a fast switching speed. It is relatively easy to use and can be used in a variety of application, from low power amplifiers to high power switches. Furthermore, MPSA28_D27Z has a long shelf life. It can operate reliably and in stable condition under normal conditions for several years. This enables users to maintain the same level of performance and reliability for long periods of time without requiring extensive maintenance or replacing the device regularly.

Disadvantages

MPSA28_D27Z transistor has some drawbacks. Firstly, its collector-emitter breakdown voltage rating is low, which limits its maximum power dissipation rating. It also has a low collector-emitter saturation voltage rating, limiting its maximum saturation current and switching speed. Additionally, its high voltage rating increases the possibility of thermal runaway when used in high power applications.

Conclusion

MPSA28_D27Z is a single bipolar junction transistor (BJT) designed for use in a wide range of application. It has a low collector-emitter saturation voltage and is able to operate at high current ratings. Its features a maximum collector-emitter voltage rating of 28V, and a maximum collector current of 250mA, along with a maximum power dissipation of 500 mW. The device is relatively easy to use and provides numerous advantages, such as low power dissipation, low voltage and high current ratings, and fast switching speeds. However, its low collector-emitter breakdown voltage and saturation voltage ratings as well as its high voltage rating can limit its performance in certain applications.

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